Distributed programmed memory cells used as memory reference currents
View Patent ↗A memory circuit for an inkjet print head having a plurality of memory cells switchably connected to a source and configured in an array, wherein at least one of the memory cells is a reference memory cell and at least one of the remaining cells are data memory cells, and at least one sense amplifier adapted to compare at least one of a current and voltage received from the reference memory cell with at least one of a current and voltage received from one of the data memory cells and generate an output based on the comparison.
1. A memory circuit for an inkjet print head comprising:
a plurality of memory cells switchably connected to a source and configured in an array, wherein at least one of said memory cells is a reference memory cell and at least one of said memory cells is a data memory cell, said at least one reference memory cell being in a programmed state; and
at least one sense amplifier adapted to compare at least one of a current and voltage received from said at least one reference memory cell with at least one of a current and voltage received from said at least one data memory cell, and generate an output based on said comparison.
2. The memory circuit of claim 1 wherein said array includes an array of floating gate memory cells.
3. The memory circuit of claim 1 wherein said array includes an array of fuse memory cells.
4. The memory circuit of claim 1 wherein said array includes a two-dimensional array having at least two columns and at least two rows.
5. The memory circuit of claim 4 wherein said memory cells include a plurality of said reference memory cells and at least one column in said array is a column of said reference memory cells.
6. The memory circuit of claim 4 wherein said memory cells include a plurality of said reference memory cells and at least one row in said array is a row of said reference memory cells.
7. The memory circuit of claim 1 wherein said output of said sense amplifier is a relatively high voltage when a current received from said reference memory cell is approximately equal to a current received from one of said data memory cells.
8. The memory circuit of claim 7 wherein said high voltage corresponds to a digital “1.”
9. The memory circuit of claim 1 wherein said output of said sense amplifier is a relatively low voltage when a current received from said reference memory cell substantially differs from a current received from one of said data memory cells.
10. The memory circuit of claim 9 wherein said low voltage corresponds to a digital “0 ”
11. A method for determining the digital state of a target data memory cell in an array of memory cells associated with an inkjet print head, said array of memory cells including at least one reference memory cell and at least one data memory cell, comprising:
initially programming said at least one reference memory cell;
applying a selected source to said reference memory cell to generate at least one of a current and voltage from said reference memory cell;
applying a source to said target data memory cell to generate at least one of a current and voltage from said target data memory cell;
comparing said at least one of a current and voltage from said reference memory cell with said at least one of a current and voltage from said target data memory cell; and
generating an output based on said comparison.
12. The method of claim 11 wherein said array of memory cells includes a floating gate memory array.
13. The method of claim 11 wherein said array of memory cells includes an array of fuse memory cells.
14. The method of claim 11 wherein said array is a two-dimensional array including at least two columns and at least two rows.
15. The method of claim 14 wherein at least one column in said array includes a column of reference cells.
16. The method of claim 14 wherein at least one row in said array includes a row of reference cells.
17. The method of claim 11 wherein said output is a relatively high voltage when a current from said data memory cell is approximately equal to a current from said one of said reference memory cells.
18. The method of claim 11 wherein said output is a relatively low voltage when a current from said data memory cell is substantially different than a current from said one of said reference memory cells.
19. The method of claim 11 wherein said output is a relatively high voltage when a voltage from said data memory cell is approximately equal to a voltage from said reference memory cells.
20. The method of claim 11 wherein said output is a relatively low voltage when a voltage from said data memory cell is substantially different than a voltage from said one of said reference memory cells.
21. The method of claim 11 wherein the selected source comprises a selected voltage.