Laser mask and crystallization method using the same
View Patent ↗A crystallization method using a mask includes providing a substrate having a semiconductor layer; positioning a mask over the substrate, the mask having first, second and third blocks, each block having a periodic pattern including a plurality of transmitting regions and a blocking region, the periodic pattern of the first block having a first position, the periodic pattern of the second block having a second position, the periodic pattern of the third block having a third position, the first, second and third positions being different from each other; and crystallizing the semiconductor layer by irradiating a laser beam through the mask.
1. A laser mask having first, second and third blocks, each block having a periodic pattern including a plurality of transmitting regions and a blocking region, the periodic pattern of the first block having a first position, the periodic pattern of the second block having a second position, the periodic pattern of the third block having a third position, the first, second and third positions being different from each other, wherein when the three periodic patterns are projected in one block, the adjacent three transmitting regions form one equilateral triangle.
2. The laser mask according to claim 1 , wherein when the three periodic patterns are projected in one block, six of the equilateral triangles form a regular hexagon.
3. The laser mask according to claim 1 , wherein the transmitting regions have a shape of a circle.
4. The laser mask according to claim 3 , wherein a distance between the centers of the transmitting regions is L, a radius of the transmitting regions having a circular shape is R, and L and R have a relationship of
L
3
≤
R
<
L
2
.
5. The laser mask according to claim 1 , wherein the transmitting regions have a shape of a polygon, the polygon including triangle, square, hexagon and octagon.
6. The laser mask according to claim 1 , wherein the transmitting regions in each block are arranged in an N columns×M rows matrix configuration (each of N and M is an integer).
7. The laser mask according to claim 6 , wherein the transmitting regions in each block are arranged crisscross in odd and even rows.
8. The laser mask according to claim 1 , wherein the laser mask is made of metal, the metal including chrome or aluminum.