Optical system and method for measuring small dimensions
Disclosed is system and method for measuring small integrated circuit features without destroying the wafer. A preferred embodiment comprises measuring the deviation from the characteristic refractive index of a wafer surface as indicative of the size of the circuit features. The method further comprises irradiating a plurality of the features, detecting emanating radiation with respect to the features, determining therefrom an effective index of refraction of the film and the features, and analyzing the effective index of refraction to determine the size of the features. Analyzing the effective index of refraction comprises comparing the effective index of refraction to an index of refraction of a film having therein features of a nominal feature size and determining the deviation of feature size based upon the comparing step.
1 . A method for measuring features of an integrated circuit device on a wafer having a film, the method comprising:
irradiating a plurality of the features using irradiating radiation having a wavelength and a spot size;
detecting emanating radiation emanating from the features and determining therefrom an effective index of refraction of the film; and
analyzing the effective index of refraction of the film to determine a size of the features.
2 . The method of claim 1 , wherein analyzing the effective index of refraction comprises comparing the effective index of refraction to an index of refraction of a reference film having therein features of a nominal feature size; and
determining a deviation of feature size based upon the comparing of the indexes of refraction.
3 . The method of claim 1 , wherein analyzing the effective index of refraction of the film to determine a size of the features further comprises a using a Bruggeman effective medium approximation.
4 . The method of claim 1 , wherein detecting emanating radiation is performed using at least one of an ellipsometric, a scatterometric, a reflectometric, FT-IR, and a polarimetric technique.
5 . The method of claim 1 , wherein the emanating radiation is at least one of reflected, scattered, emitted, and transmitted radiation.
6 . The method of claim 1 , wherein the features comprise at least one of a cell, a mesa, a tunnel junction mesa, a trench, a transistor, a contact, a trench filled with polysilicon, an isolation space, and a film hole.
7 . The method of claim 1 , wherein the wavelength is infrared.
8 . The method of claim 1 , wherein the wavelength is greater than the feature.
9 . The method of claim 1 , wherein the spot size covers at least 10 features.
10 . The method of claim 1 , wherein the features comprise a line and space pattern defined by a plurality of stripes of photoresist.
11 . The method of claim 10 , wherein the spot size covers at least 10 lines.
12 . A method of manufacturing a semiconductor device, the method comprising:
forming a film of a first material;
forming features in the film, the features having a feature size that deviates from a nominal size, the features being formed of a second material;
illuminating the film and the features;
analyzing light reflected from the film and the features and determining therefrom an index of refraction of the film and the features;
comparing the index of refraction of the film and the features to an index of refraction derived from a known film having formed therein nominal features of the nominal size; and
determining a deviation from a nominal feature size based upon the comparing.
13 . The method of claim 12 , wherein the index of refraction of the film and the features is empirically derived.
14 . The method of claim 12 , wherein the index of refraction of the film and the features is derived based upon a relative nominal area of the features and from a refractive index of the first material and a refractive index of the second material.
15 . The method of claim 12 , further comprising adjusting at least one parameter for forming features in the film in response to the step of determining a deviation from a nominal feature size.
16 . The method of claim 12 , wherein the deviation from a nominal feature size is zero.
17 . A system for measuring features of a workpiece having a film, the system comprising:
an illumination tool for illuminating the features and the film using radiation having a wavelength and a spot size;
a detection tool for detecting a reflected light with respect to the features and the film, wherein the detection tool determines an effective index of refraction of the features and the film based upon the reflected light; and
a processor for determining a feature size based upon the effective index of refraction of the features and the film and an index of refraction of a reference film having thereon precisely measured features.
18 . The system of claim 17 , wherein the detection tool further comprises at least one of an ellipsometric, a scatterometric, a reflectometric, FT-IR, and a polarimetric device.
19 . The system of claim 17 , wherein the processor uses a Bruggeman effective medium approximation for determining the feature size.
20 . The system of claim 17 , wherein the features comprise at least one of a cell, a mesa, a tunnel junction mesa, a trench, a transistor, a contact, a trench filled with polysilicon, an isolation space, and a film hole.
21 . The system of claim 17 , wherein the wavelength is infrared.
22 . The system of claim 17 , wherein the wavelength is greater than the feature.
23 . The system of claim 17 , wherein the spot size covers at least 10 features.
24 . The system of claim 17 , wherein the features comprise a line and space pattern defined by a plurality of stripes of photoresist.
25 . The system of claim 24 , wherein the spot size covers at least 10 lines.
26 . The system of claim 17 , wherein the work piece comprises an IR focal plane array, a gamma ray imaging detector, a photovoltaic cell, a flat panel display, a substrate, an integrated circuit, or a semiconductor device.