Organic electro luminescence device in which an amorphous silicon thin film transistor is employed as a driving element and a fabrication method thereof
View Patent ↗Provided is a method of fabricating an organic electro luminescence device, the method comprising: forming a thin film transistor on a substrate; forming a passivation layer and a first electrode on the substrate including the thin film transistor; forming a contact hole exposing an upper surface of a drain electrode of the thin film transistor at a predetermined portion of the first electrode and the passivation layer; forming a buffer layer and a barrier rib on a predetermined portion of an upper surface of the first electrode; forming an organic emission layer within a region defined by the buffer layer; and forming a second electrode on the organic emission layer such that the second electrode is electrically connected with the drain electrode through the contact hole.
1. An organic electro luminescence device, comprising:
a plurality of thin-film transistors (TFTs) on a substrate;
a passivation layer directly over the TFTs;
an opaque metal layer over the passivation layer functioning as a reflector;
an anode over the opaque metal layer;
a contact hole through a predetermined portion of the anode and the passivation layer exposing an upper surface of a drain electrode of the thin film transistor;
a buffer layer on an edge portion of the anode;
an organic emission layer within a region defined by the buffer layer;
a cathode on the organic emission layer and directly connected with the drain electrode through the contact hole;
and
a barrier rib directly adjacent to the contact hole on the buffer layer.
2. The organic electro luminescence device of claim 1 , wherein the thin film transistor comprises a gate electrode, a gate insulating layer, an active layer, an ohmic contact layer, a source electrode and the drain electrode.
3. The organic electro luminescence device of claim 2 , wherein the active layer is formed of a-Si, and the thin film transistor is an n-type.
4. The organic electro luminescence device of claim 1 , wherein the anode includes a transparent conductive material.
5. The organic electro luminescence device of claim 1 , wherein the anode includes an opaque metal selected from the group consisting of Al and Cr.
6. The organic electro luminescence device of claim 1 , wherein the anode is on an area except for a region where the contact hole is formed.
7. The organic electro luminescence device of claim 1 , wherein the buffer layer is provided at a periphery of a pixel region where the organic emission layer is formed.
8. The organic electro luminescence device of claim 1 , wherein the organic emission layer includes an HIL, an HTL, an EML and an ETL on the anode.
9. The organic electro luminescence device of claim 1 , wherein the cathodes are separated at each pixel region by the barrier rib.
10. The organic electro luminescence device of claim 1 , wherein the cathode includes a transparent metal.
11. The organic electro luminescence device of claim 1 , wherein the cathode has a thickness less than 100 Å such that light can transmit the cathode.