IP Library Granted Patent US 7,002,379
Granted Patent B2
US 7,002,379 · App. 10/966,065 · Granted Feb 21, 2006

I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered off

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,002,379
App. No.
10/966,065
Granted
Feb 21, 2006
Kind
B2
Abstract

An apparatus for providing bias voltages for input/output (I/O) connections on low voltage integrated circuits. In one embodiment, the invention comprises an I/O pad, a pull-down transistor device that has a protective transistor coupled to said I/O pad, and a pull-up transistor device that has a second protective transistor, coupled to said I/O pad. A first switch coupled to the first protective transistor is responsive to a first supply voltage, a second supply voltage, and a reference voltage. Likewise, a second switch coupled to the second protective transistor is responsive to the first supply voltage and the reference voltage. A first self-bias circuit is also coupled to the first switch, wherein said the self-bias circuit uses a voltage at said I/O pad to bias the first protective transistor when both of the first and second supply voltages are powered off. Likewise, a second self-bias circuit coupled to the second switch, wherein the second self-bias circuit also uses the voltage at the I/O pad and an output of the first self bias circuit, to bias the second protective transistor when the first supply voltage is powered off.

Claims (9)

1. A circuit comprising:

an I/O pad;

a pull-down transistor device having a first protective transistor, the pull-down transistor device being configured for coupling to the I/O pad;

a pull-up transistor device having a second protective transistor, the pull-up transistor device being configured for coupling to the I/O pad;

means for biasing the first and second protective transistors using a plurality of supply voltages; and

means for biasing the first and second protective transistors using a voltage at the I/O pad when one or more of the plurality of supply voltages are off.

2. The circuit of claim 1 , further comprising:

a floating well on which the pull-up transistor device is fabricated; and

means for biasing the floating well when one or more of the plurality of supply voltages are off.

Assignments (3)
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: BROADCOM CORPORATION
Reel/Frame 041712/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 1, 2017
From: BROADCOM CORPORATION
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041706/0001 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: BROADCOM CORPORATION
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037806/0001 →