Capping layer for crystallizing germanium, and substrate having thin crystallized germanium layer
View Patent ↗A structure including at least one layer of germanium formed on a surface of a ceramic substrate is provided. The layer of germanium has a thickness of not larger than 10 microns and includes grains having grain size of at least 0.05 mm. A structure including at least one layer of germanium formed on a surface of a ceramic substrate and having at least one capping layer formed on a surface of the layer of germanium is also provided. In addition, a method of forming a thin film germanium structure is provided including forming at least one layer of germanium on a surface of a ceramic substrate, then forming at least one capping layer on a surface of the layer of germanium, followed by heating and then cooling the layer of germanium.
1. A method of forming a thin film germanium structure, comprising:
forming at least one layer of germanium on a surface of a ceramic substrate;
forming at least one capping layer on a surface of said layer of germanium;
heating said layer of germanium to a temperature of at least about 600° C. after forming said at least one capping layer thereon; and
cooling said layer of germanium after said heating of said layer of germanium.
2. A method of forming a thin film germanium structure as recited in claim 1 , wherein said heating of said layer of germanium heats said layer of germanium to a temperature of about 600° C. to about 900° C.
3. A method of forming a thin film germanium structure as recited in claim 1 , further comprising removing said capping layer after said cooling of said layer of germanium.
4. A method of forming a thin film germanium structure as recited in claim 1 , wherein said capping layer comprises at least one metal.
5. A method of forming a thin film germanium structure as recited in claim 1 , wherein said capping layer comprises aluminum.
6. A method of forming a thin film germanium structure as recited in claim 1 , wherein said layer of germanium has a thickness of not larger than 10 microns.
7. A method of forming a thin film germanium structure as recited in claim 1 , wherein after said cooling, said layer of germanium has a plurality of grains having grain size of at least 0.05 mm.
8. A method of forming a thin film germanium structure as recited in claim 1 , wherein after said cooling, said layer of germanium has a plurality of grains having grain size of at least 1 mm.
9. A method of forming a thin film germanium structure as recited in claim 1 , wherein said capping layer has a thickness in the range of from about 2,000 angstroms to about 10,000 angstroms.
10. A method of forming a thin film germanium structure as recited in claim 1 , wherein said layer of germanium is formed by at least one technique selected from the group consisting of electron-beam evaporation, thermal evaporation, plasma-enhanced chemical vapor deposition, chemical vapor deposition, molecular beam deposition, electroplating, melt coating, and sputtering.
11. A method of forming a thin film germanium structure as recited in claim 1 , wherein said layer of germanium is cooled at a rate of about 1° C. per minute during said cooling of said layer of germanium.