Semiconductor device package utilizing proud interconnect material
View Patent ↗A semiconductor package which includes a conductive can, a semiconductor die received in the interior of the can and connected to an interior portion thereof at one of its sides, at least one interconnect structure formed on the other side of the semiconductor die, and a passivation layer disposed on the other side of the semiconductor die around the interconnect structure and extending at least to the can.
1. A semiconductor device comprising:
a semiconductor die having at least a first power electrode and a control electrode on a first surface thereof, and
an interconnect structure formed on said power electrode and said control electrode, said interconnect structure including a plurality of conductive particles glued to one another by a conductive binder, wherein said electrically conductive binder comprises 50-85% of the total weight of the interconnects, and said electrically conductive particles comprise 5-40% of the total weight of the interconnects.
2. A semiconductor device according to claim 1 further comprising, a second power electrode on said first surface, said second power electrode further including an interconnect structure, said interconnect structure including a plurality of conductive particles glued to one another by a conductive binder.
3. A semiconductor device according to claim 1 further comprising, a second power electrode on a second surface of said semiconductor die, and a conductive can, wherein said second power electrode is electrically connected to an interior surface of said conductive can.
4. A semiconductor package according to claim 1 , wherein said binder is comprised of solder.
5. A semiconductor package according to claim 1 , wherein said binder is comprised of tin-silver solder.
6. A semiconductor package according to claim 5 , wherein said tin-silver solder is a composition substantially consisting of 95.5% Sn, 3.8% Silver, and 0.7% Cu by weight.
7. A semiconductor package according to claim 4 , wherein said solder is a composition substantially consisting of 95% Sn and 5% Sb by weight.
8. A semiconductor package according to claim 4 , wherein said solder is a high lead solder.
9. A semiconductor package according to claim 4 , wherein said solder is a tin-lead solder.
10. A semiconductor package according to claim 1 , wherein said electrically conductive particles are spherical.
11. A semiconductor package according to claim 1 , wherein said electrically conductive particles are cubical.
12. A semiconductor package according to claim 1 , wherein said electrically conductive particles are parallelepipeds.
13. A semiconductor package according to claim 1 , wherein said electrically conductive particles are comprised of copper.
14. A semiconductor package according to claim 1 , wherein said electrically conductive particles are plated with a nickel barrier.
15. A semiconductor package according to claim 1 , wherein said electrically conductive particles are passivated with tin.
16. A semiconductor package according to claim 1 , wherein said electrically conductive particles are passivated with silver.
17. A semiconductor package according to claim 1 , wherein said electrically conductive particles are comprised of nickel.
18. A semiconductor package according to claim 1 , wherein said electrically conductive particles are comprised of tin silver.
19. A semiconductor package according to claim 1 , wherein said electrically conductive particles are comprised of tin-bismuth.
20. A semiconductor package according to claim 1 , wherein said electrically conductive particles are 15 μm-65 μm wide in size.