Semiconductor storage device and method of fabricating the same
A semiconductor storage device includes a memory cell array, a plurality of word lines, a plurality of bit lines, a first gate wiring element 3 a, 3 b, a second gate wiring element 3 c, 3 d, a first connector 5 a, 5 b, and a second connector 5 c, 5 d. Each memory cell 10 has first and second sets having a driver transistor 11, a load transistor 12, and an access transistor 13. The word lines are arranged in parallel to each other along a first direction. The bit lines are arranged in parallel to each other along a second direction perpendicular to the first direction. The first gate wiring element comprises a gate electrode of the first driver transistor and the first load transistor, and has a rectangular shape having straight line on opposite sides. The second gate wiring element comprises a gate electrode of the access transistor and has a rectangular shape having straight line on opposite sides.
1 - 11 . (canceled)
12 . A semiconductor storage device comprising:
a memory cell array comprising memory cells each having first and second driver transistors, first and second load transistors, and first and second access transistors, the memory cells being two-dimensionally arranged on a semiconductor substrate;
a plurality of word lines connected to the memory cells and arranged in parallel to each other along a first direction;
a plurality of bit lines connected to the memory cells, the bit lines being arranged in parallel to each other along a second direction perpendicular to the first direction;
a first gate wiring element composing a gate electrode of the first driver transistor and the first load transistor; and
a second gate wiring element connected to the access transistor, wherein the first and second gate wiring elements have longitudinal directions in parallel to each other along the first direction.
13 . A semiconductor storage device according to claim 12 , wherein the first and second gate wiring elements are arranged to have substantially the same distance between one of the first gate wiring element and one of the second gate wiring element adjacent to each other at least one of the first direction and the second direction.
14 . A semiconductor storage device according to claim 12 , wherein shapes of the first gate wiring element and the second gate wiring element projected on a plane parallel to a substrate are substantially the same.
15 . A semiconductor storage device according to claim 12 , further comprising:
a first connector connecting the first gate wiring element, the second driver transistor, and the second load transistor to each other; and
a second connector connecting the second gate wiring element to the word line to each other.