Method of affecting RRAM characteristics by doping PCMO thin films

1. A method of fabricating a doped-PCMO thin film layer comprising:

preparing a PCMO precursor solution, including:

dehydrating Ca(OAc) 2 (H 2 O) and Mn(OAc) 3 (2H 2 O);

mixing Pr(OAc) 3 (H 2 O), Ca(OAc) 2 (H 2 O) and Mn(OAc) 3 (2H 2 O);

adding a transition metal additive to the PCMO precursor solution;

dissolving the PCMO chemicals and transition metal additive in an organic solvent;

heating the doped-PCMO precursor solution at between about 90° to 120° for between about one hour to eight hours;

filtering the doped-PCMO through a 0.2 μm filter; thereby forming doped-PCMO spin-coating solution;

spin-coating the doped-PCMO spin-coating solution onto a wafer by:

injecting the doped-PCMO spin-coating solution onto a wafer surface;

spinning the wafer at about 2500 RPM for about 45 seconds;

baking the coated wafer at about 180° for about one minute;

ramping the baking temperature up to about 230°, and baking for about one minute;

annealing the wafer in a RTA furnace at about 500° for about five minutes;

repeating the spin-coating process at least three times to fabricate a doped-PCMO layer; and

annealing the wafer at between about 500° to 600° for between about one hour to six hours in dry, clean air.

2. The method of claim 1 wherein said adding includes selecting a transition metal additive from the group of transition metal additives consisting of V, Cr, Co, Fe, Ni, Ti, Zr, Hf, Nb, Ta, Mo W and Zn.

3. The method of claim 2 wherein said adding includes adding a transition metal additive in a ranges of between about 0.01 mol % to 10 mol % of the transition metal additive to the PCMO.

4. The method of claim 1 wherein the organic solvent is acetic acid to form a doped-PCMO precursor solution.

5. A method of fabricating a doped-PCMO thin film layer comprising:

preparing a PCMO precursor solution, including:

dehydrating Ca(OAc) 2 (H 2 O) and Mn(OAc) 3 (2H 2 O);

mixing Pr(OAc) 3 (H 2 O), Ca(OAc) 2 (H 2 O) and Mn(OAc) 3 (2H 2 O);

adding a transition metal additive to the PCMO precursor solution, including selecting a transition metal additive from the group of transition metal additives consisting of V, Cr, Co, Fe, Ni, Ti, Zr, Hf, Nb, Ta, Mo W and Zn;

dissolving the PCMO chemicals and transition metal additive in an organic solvent;

heating the doped-PCMO precursor solution at between about 90° to 120° for between about one hour to eight hours;

filtering the doped-PCMO through a 0.2 μm filter; thereby forming doped-PCMO spin-coating solution;

spin-coating the doped-PCMO spin-coating solution onto a wafer by:

injecting the doped-PCMO spin-coating solution onto a wafer surface;

spinning the wafer at about 2500 RPM for about 45 seconds;

baking the coated wafer at about 180° for about one minute;

ramping the baking temperature up to about 230°, and baking for about one minute;

annealing the wafer in a RTA furnace at about 500° for about five minutes;

repeating the spin-coating process at least three times to fabricate a doped-PCMO layer; and

annealing the wafer at between about 500° to 600° for between about one hour to six hours in dry, clean air.

6. The method of claim 5 wherein said adding includes adding a transition metal additive in a range of between about 0.01 mol % to 10 mol % of the transition metal additive to the PCMO.

7. The method of claim 5 wherein the organic solvent is acetic acid to form a doped-PCMO precursor solution.

8. A method of fabricating a doped-PCMO thin film layer comprising:

preparing a PCMO precursor solution, including:

dehydrating Ca(OAc) 2 (H 2 O) and Mn(OAc) 3 (2H 2 O);

mixing Pr(OAc) 3 (H 2 O), Ca(OAc) 2 (H 2 O) and Mn(OAc) 3 (2H 2 O);

adding a transition metal additive to the PCMO precursor solution, including selecting a transition metal additive from the group of transition metal additives consisting of V and Cr;

dissolving the PCMO chemicals and transition metal additive in an organic solvent;

heating the doped-PCMO precursor solution at between about 90° to 120° for between about one hour to eight hours;

filtering the doped-PCMO through a 0.2 μm filter; thereby forming doped-PCMO spin-coating solution;

spin-coating the doped-PCMO spin-coating solution onto a wafer by:

injecting the doped-PCMO spin-coating solution onto a wafer surface;

spinning the wafer at about 2500 RPM for about 45 seconds;

baking the coated wafer at about 180° for about one minute;

ramping the baking temperature up to about 230°, and baking for about one minute;

annealing the wafer in a RTA furnace at about 500° for about five minutes;

repeating the spin-coating process at least three times to fabricate a doped-PCMO layer; and

annealing the wafer at between about 500° to 600° for between about one hour to six hours in dry, clean air.

9. The method of claim 8 wherein said adding includes adding the transition metal additive in a range of between about 0.01 mol % to 10 mol % of the transition metal additive to the PCMO.

10. The method of claim 8 wherein the organic solvent is acetic acid to form a doped-PCMO precursor solution.