Manufacturing method of thin film device substrate
View Patent ↗Method of manufacturing a thin film device substrate wherein no trench fabrication is required to be applied onto the substrate surface, and a material which is impervious to light can be used, and the substrate can be peeled off quickly. Firstly, a peeling-off film, a silicon oxide film and an amorphous silicon film are formed in succession on a glass substrate, and the amorphous silicon film is irradiated from above to obtain a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded thereon, and finally the glass substrate is peeled off with the peeling-off film, to complete transfer of the TFT. Because the peeling-off film has a gap space, its etching rate is high. Therefore, it is unnecessary to form a trench for supplying an etchant on the surface of the glass substrate.
1. A method of manufacturing a thin film device substrate; which comprising the steps of:
forming, on a first substrate, a peeling-off film made of a porous film;
forming a semiconductor film on said peeling-off film;
forming a thin film device with said semiconductor film;
bonding a second substrate onto said thin film device; and
peeling off said first substrate at said peeling-off film,
wherein the step of forming a peeling-off film on a first substrate comprises the steps of:
forming, on said first substrate, a primary film in which said porous film is to be formed in a subsequent step;
forming, in a film formed on said primary film, a large number of through holes to reach said primary film; and
supplying an etchant from said through holes and thereby forming pores in said primary film.
2. A method of manufacturing a thin film device substrate according to claim 1 , wherein the step of peeling off said first substrate at said peeling-off film comprises the step of breaking said porous film mechanically.
3. A method of manufacturing a thin film device substrate according to claim 1 , wherein said porous film is made of silicon oxide.
4. A method of manufacturing a thin film device substrate according to claim 1 , wherein the step of peeling off first said substrate at said first peeling-off film comprising the step of providing a layered structure between said first and second substrates prior to said peeling-off.
5. A method of manufacturing a thin film device substrate according to claim 1 , wherein said semiconductor film is made of silicon.
6. A method of manufacturing a thin film device substrate according to claim 1 , wherein said thin film device is a thin film transistor.
7. A method of manufacturing a thin film device substrate; which comprising the steps of:
forming, on a first substrate, a peeling-off film made of a porous film;
forming a semiconductor film on said peeling-off film;
forming a thin film device with said semiconductor film;
bonding a second substrate onto said thin film device; and
peeling off said first substrate at said peeling-off film,
wherein the step of peeling off said first substrate at said peeling-off film comprises the step of supplying an etchant into said porous film, thereby removing said peeling-off film.
8. A method of manufacturing a thin film device substrate according to claim 7 , wherein the step of forming said peeling-off film comprises applying an amorphous silicon oxide film by spin coating.
9. A method of manufacturing a thin film device substrate according to claim 7 , wherein the step of forming said peeling-off film comprises selectively etching a silicon oxide film.
10. A method of manufacturing a thin film device substrate; which comprising the steps of:
forming, on a first substrate, a peeling-off film made of a porous film;
forming a semiconductor film on said peeling-off film;
forming a thin film device with said semiconductor film;
bonding a second substrate onto said thin film device; and
peeling off said first substrate at said peeling-off film,
which, with said peeling-off film being taken as a first peeling-off film, further comprising the step of forming, over said first peeling-off film, a second peeling-off film that is to be peeled off in a subsequent step; wherein the step of peeling off said first substrate at said first peeling-off film comprises the step of removing said second peeling-off film.
11. A method of manufacturing a thin film device substrate according to claim 10 , wherein the step of removing said second peeling-off film comprises the step of making an etchant permeate through said porous film of said first peeling-off film, thereby etching said second peeling-off film.
12. A method of manufacturing a thin film device substrate according to claim 11 , wherein said second peeling-off film is made of chromium and said first peeling-off film is made of porous silicon oxide.
13. A method of manufacturing a thin film device substrate according to claim 10 , wherein the step of peeling off said first substrate at said first peeling-off film comprises the step of breaking mechanically, at least, one of said first peeling-off film and said second peeling-off film.
14. A method of manufacturing a thin film device substrate; which comprising the steps of:
forming, on a first substrate, a peeling-off film made of a porous film;
forming a semiconductor film on said peeling-off film;
forming a thin film device with said semiconductor film;
bonding a second substrate onto said thin film device; and
peeling off said first substrate at said peeling-off film,
which, with said peeling-off film being taken as a first peeling-off film, further comprising the step of forming, under said first peeling-off film, a second peeling-off film that is to be peeled off in a subsequent step; wherein the step of peeling off said first substrate at said first peeling-off film comprises the steps of removing said second peeling-off film and removing said first peeling-off film.
15. A method of manufacturing a thin film device substrate according to claim 14 , wherein the step of removing said second peeling-off film comprising the step of making an etchant permeate through said porous film of said first peeling-off film, thereby etching said second peeling-off film.
16. A method of manufacturing a thin film device substrate according to claim 15 , wherein said second peeling-off film is made of chromium and said first peeling-off film is made of porous silicon oxide.
17. A method of manufacturing a thin film device substrate according to claim 14 , wherein the step of peeling off said first substrate at said first peeling-off film comprises the step of breaking mechanically, at least, one of said first peeling-off film and said second peeling-off film.
18. A method of manufacturing a thin film device substrate; which comprising the steps of:
forming, on a first substrate, a peeling-off film made of a porous film;
forming a semiconductor film on said peeling-off film;
bonding a second substrate onto said semiconductor film;
peeling off said first substrate at said peeling-off film; and
forming a thin film device with said semiconductor film after peeling off said first substrate at said peeling-off film,
wherein the step of forming a peeling-off film on a first substrate comprising the steps of:
forming, on said first substrate, a primary film in which said porous film is to be formed in a subsequent step;
forming, in a film formed on said primary film, a large number of through holes to reach said primary film; and
supplying an etchant from said through holes and thereby forming pores in said primary film.
19. A method of manufacturing a thin film device substrate according to claim 18 , wherein the step of peeling off said first substrate at said peeling-off film comprises the step of breaking said porous film mechanically.
20. A method of manufacturing a thin film device substrate according to claim 18 , wherein said porous film is made of silicon oxide.
21. A method of manufacturing a thin film device substrate according to claim 18 , wherein the step of peeling off first said substrate at said first peeling-off film comprises the step of providing a layered structure between said first and second substrates prior to said peeling-off.
22. A method of manufacturing a thin film device substrate according to claim 18 , wherein said semiconductor film is made of silicon.
23. A method of manufacturing a thin film device substrate according to claim 18 , wherein said thin film device is a thin film transistor.
24. A method of manufacturing a thin film device substrate; which comprising the steps of:
forming, on a first substrate, a peeling-off film made of a porous film;
forming a semiconductor film on said peeling-off film;
bonding a second substrate onto said semiconductor film;
peeling off said first substrate at said peeling-off film; and
forming a thin film device with said semiconductor film after peeling off said first substrate at said peeling-off film,
wherein the step of peeling off said first substrate at said peeling-off film comprises the step of supplying an etchant into said porous film, thereby removing said peeling-off film.
25. A method of manufacturing a thin film device substrate according to claim 24 , wherein the step of forming said peeling-off film comprises applying an amorphous silicon oxide film by spin coating.
26. A method of manufacturing a thin film device substrate according to claim 24 , wherein the step of forming said peeling-off film comprises selectively etching a silicon oxide film.
27. A method of manufacturing a thin film device substrate; which comprising the steps of:
forming, on a first substrate, a peeling-off film made of a porous film;
forming a semiconductor film on said peeling-off film;
bonding a second substrate onto said semiconductor film;
peeling off said first substrate at said peeling-off film; and
forming a thin film device with said semiconductor film after peeling off said first substrate at said peeling-off film,
which, with said peeling-off film being taken as a first peeling-off film, further comprising the step of forming, over said first peeling-off film, a second peeling-off film that is to be peeled off in a subsequent step; wherein the step of peeling off said first substrate at said first peeling-off film comprises the step of removing said second peeling-off film.
28. A method of manufacturing a thin film device substrate according to claim 27 , wherein the step of removing said second peeling-off film comprises the step of making an etchant permeate through said porous film of said first peeling-off film, thereby etching said second peeling-off film.
29. A method of manufacturing a thin film device substrate according to claim 28 , wherein said second peeling-off film is made of chromium and said first peeling-off film is made of porous silicon oxide.
30. A method of manufacturing a thin film device substrate according to claim 27 , wherein the step of peeling off said first substrate at said first peeling-off film comprises the step of breaking mechanically, at least, one of said first peeling-off film and said second peeling-off film.
31. A method of manufacturing a thin film device substrate; which comprising the steps of:
forming, on a first substrate, a peeling-off film made of a porous film;
forming a semiconductor film on said peeling-off film;
bonding a second substrate onto said semiconductor film;
peeling off said first substrate at said peeling-off film; and
forming a thin film device with said semiconductor film after peeling off said first substrate at said peeling-off film,
which, with said peeling-off film being taken as a first peeling-off film, further comprising the step of forming, under said first peeling-off film, a second peeling-off film that is to be peeled off in a subsequent step; wherein the step of peeling off said first substrate at said first peeling-off film comprises the steps of removing said second peeling-off film and removing said first peeling-off film.
32. A method of manufacturing a thin film device substrate according to claim 31 , wherein the step of removing said second peeling-off film comprises the step of making an etchant permeate through said porous film of said first peeling-off film, thereby etching said second peeling-off film.
33. A method of manufacturing a thin film device substrate according to claim 32 , wherein said second peeling-off film is made of chromium and said first peeling-off film is made of porous silicon oxide.
34. A method of manufacturing a thin film device substrate according to claim 31 , wherein the step of peeling off said first substrate at said first peeling-off film comprises the step of breaking mechanically, at least, one of said first peeling-off film and said second peeling-off film.