ALD ZnO seed layer for deposition of ZnO nanostructures on a silicon substrate
View Patent ↗Zinc-oxide nanostructures are grown without using a metal catalyst by forming a seed layer of polycrystalline zinc oxide on a surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. Growth of at least one zinc-oxide nanostructure is induced on the seed layer. The seed layer can alternatively be formed by using a spin-on technique, such as a metal organic deposition technique, a spray pyrolisis technique, an RF sputtering technique or by oxidation of the seed layer.
1. A method of forming a zinc-oxide nanostructure, comprising:
providing a substrate;
forming a seed layer of polycrystalline zinc oxide on a surface of the substrate using an atomic layer deposition technique; and
inducing growth of at least one zinc-oxide nanostructure on the seed layer.
2. The method according to claim 1 , wherein forming the seed layer further includes forming the seed layer using alternating pulses of a diethylzinc precursor and water vapor.
3. The method according to claim 1 , wherein the seed layer is at least about 0.5 nm thick.
4. A zinc-oxide nanostructure formed by:
providing a substrate;
forming a seed layer of polycrystalline zinc oxide on a surface of the substrate using an atomic layer deposition technique; and
inducing growth of at least one zinc-oxide nanostructure on the seed layer.
5. The zinc-oxide nanostructure according to claim 4 , wherein forming the seed layer further includes forming the seed layer using alternating pulses of a diethylzinc precursor and water vapor.
6. The zinc-oxide nanostructure according to claim 4 , wherein the seed layer is at least about 0.5 nm thick.
7. A zinc-oxide nanostructure, comprising:
a substrate;
a seed layer of polycrystalline zinc oxide formed on a surface of the substrate wherein the seed layer is formed by an atomic layer deposition technique; and
at least one zinc-oxide nanostructure formed on the seed layer.
8. The zinc-oxide nanostructure according to claim 7 , wherein the seed layer is further formed by using alternating pulses of a diethylzinc precursor and water vapor.
9. The zinc-oxide nanostructure according to claim 7 , wherein the seed layer is at least about 0.5 nm thick.