Manufacturing method of thin film device substrate
View Patent ↗An object of the present invention is to prevent the thin film device formed by laser annealing from making, due to overheat, abnormal operations. Firstly, on a glass substrate 101 . a heat insulating film, a silicon oxide film and an amorphous silicon film are formed in succession, and the amorphous silicon film is irradiated from above with a laser beam of an excimer laser. After being molten, the amorphous silicon film undergoes recrystallization to form a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded onto the TFT, and finally the glass substrate is peeled off by way of the heat insulating film, whereby a transfer of the TFT is completed. Because the heat insulating film is removed, abnormality caused by overheat at the time of operation is well prevented from occurring.
1. A method of manufacturing a thin film device substrate; comprising the steps of:
forming, on a first substrate, a heat insulating film to hinder heat conduction;
forming a semiconductor film on said heat insulating film;
applying laser annealing to said semiconductor film;
forming a thin film device with said semiconductor film which has been subjected to the laser annealing;
bonding a second substrate onto said thin film device; and
peeling off said first substrate and said heat insulating film from a layered structure between said first substrate and said second substrate inclusive, wherein,
said heat insulating film is a film having a gap space,
said gap space is formed by means of etching, and
the step of forming a heat insulating film on a first substrate comprising the steps of:
forming, on said first substrate, a primary film in which said gap space is to be formed in a subsequent step;
forming, in a film formed on said primary film, a large number of through holes to reach said primary film; and
supplying an etchant from said through holes and thereby forming said gap space in said primary film.
2. A method of manufacturing a thin film device substrate according to claim 1 , wherein said film having a gap space is a porous film.
3. A method of manufacturing a thin film device substrate according to claim 1 , wherein the step of peeling off said first substrate and said heat insulating film comprises the step of supplying said etchant into said gap space and thereby removing said heat insulating film.
4. A method of manufacturing a thin film device substrate according to claim 1 , wherein the step of peeling off said first substrate and said heat insulating film comprises the step of breaking said heat insulating film mechanically.
5. A method of manufacturing a thin film device substrate according to claim 1 , wherein said heat insulating film is made of silicon oxide.
6. A method of manufacturing a thin film device substrate according to claim 1 ; which further comprises the step of forming, under said heat insulating film, a peeling-off film that is to be peeled off in a subsequent step; wherein
the step of peeling off said first substrate and said heat insulating film comprises the steps of removing said peeling-off film and removing said heat insulating film.
7. A method of manufacturing a thin film device substrate according to claim 6 , wherein said heat insulating film is made of a film having a gap space; and
the step of removing said peeling-off film comprises the step of making an etchant permeate through said gap space and thereby etching said peeling-off film.
8. A method of manufacturing a thin film device substrate according to claim 7 , wherein said peeling-off film is made of chromium and said heat insulating film is made of porous silicon oxide.
9. A method of manufacturing a thin film device substrate according to claim 6 , wherein the step of peeling off said first substrate and said heat insulating film comprises the step of breaking mechanically, at least, one of said heat insulating film and said peeling-off film.
10. A method of manufacturing a thin film device substrate according to claim 1 , wherein said semiconductor film is made of silicon.
11. A method of manufacturing a thin film device substrate according to claim 1 , wherein said thin film device is a thin film transistor.
12. A method of manufacturing a thin film device substrate, comprising the steps of:
forming, on a first substrate, a heat insulating film to hinder heat conduction;
forming a semiconductor film on said heat insulating film;
applying laser annealing to said semiconductor film;
forming a thin film device with said semiconductor film which has been subjected to the laser annealing;
bonding a second substrate onto said thin film device;
peeling off said first substrate and said heat insulating film from a layered structure between said first substrate and said second substrate inclusive; and
forming, over said heat insulating film, a peeling-off film that is to be peeled off in a subsequent step,
wherein the step of peeling off said first substrate and said heat insulating film comprises the step of removing said peeling-off film,
said heat insulating film is made of a film having a gap space; and
the step of removing said peeling-off film comprises the step of making an etchant permeate through said gap space and thereby etching said peeling-off film.
13. A method of manufacturing a thin film device substrate according to claim 12 , wherein said peeling-off film is made of chromium and said heat insulating film is made of porous silicon oxide.
14. A method of manufacturing a thin film device substrate according to claim 12 , wherein the step of peeling off said first substrate and said heat insulating film comprises the step of breaking mechanically, at least, one of said heat insulating film and said peeling-off film.
15. A method of manufacturing a thin film device substrate,
comprising the steps of:
forming, on a first substrate, a heat insulating film to hinder heat conduction;
forming a semiconductor film on said heat insulating film;
applying laser annealing to said semiconductor film;
forming a thin film device with said semiconductor film which has been subjected to the laser annealing;
bonding a second substrate onto said thin film device; and
peeling off said first substrate and said heat insulating film from a layered structure between said first substrate and said second substrate inclusive,
wherein the step of peeling off said first substrate and said heat insulating film comprises the step of dividing said layered structure into a plural number, prior to said peeling-off.
16. A method of manufacturing a thin film device substrate; which comprises the steps of:
forming, on a first substrate, a heat insulating film to hinder heat conduction;
forming a semiconductor film on said heat insulating film;
applying laser annealing to said semiconductor film;
bonding a second substrate onto said semiconductor film which has been subjected to the laser annealing;
peeling off said first substrate and said heat insulating film from a layered structure between said first substrate and said second substrate inclusive; and
forming a thin film device with said semiconductor film which has been subjected to the laser annealing, wherein,
said heat insulating film is a film having a gap space,
said gap space is formed by means of etching,
the step of forming a heat insulating film on a first substrate comprises the steps of:
forming, on said first substrate, a primary film in which said gap space is to be formed in a subsequent step;
forming, in a film formed on said primary film, a large number of through holes to reach said primary film; and
supplying an etchant from said through holes and thereby forming said gap space in said primary film.
17. A method of manufacturing a thin film device substrate according to claim 16 , wherein said film having a gap space is a porous film.
18. A method of manufacturing a thin film device substrate according to claim 16 , wherein the step of peeling off said first substrate and said heat insulating film comprises the step of supplying said etchant into said gap space and thereby removing said heat insulating film.
19. A method of manufacturing a thin film device substrate according to claim 16 , wherein the step of peeling off said first substrate and said heat insulating film comprises the step of breaking said heat insulating film mechanically.
20. A method of manufacturing a thin film device substrate according to claim 16 , wherein said heat insulating film is made of silicon oxide.
21. A method of manufacturing a thin film device substrate according to claim 16 ;
further comprising the step of forming, over said heat insulating film, a peeling-off film that is to be peeled off in a subsequent step; and
wherein the step of peeling off said first substrate and said heat insulating film comprises the step of removing said peeling-off film.
22. A method of manufacturing a thin film device substrate according to claim 21 , wherein
the step of removing said peeling-off film comprises the step of making an etchant permeate through said gap space and thereby etching said peeling-off film.
23. A method of manufacturing a thin film device substrate according to claim 22 , wherein said peeling-off film is made of chromium and said heat insulating film is made of porous silicon oxide.
24. A method of manufacturing a thin film device substrate according to claim 21 , wherein the step of peeling off said first substrate and said heat insulating film comprises the step of breaking mechanically, at least, one of said heat insulating film and said peeling-off film.
25. A method of manufacturing a thin film device substrate according to claim 16 ;
further comprising the step of forming, under said heat insulating film, a peeling-off film that is to be peeled off in a subsequent step; and
wherein the step of peeling off said first substrate and said heat insulating film comprises the steps of removing said peeling-off film and removing said heat insulating film.
26. A method of manufacturing a thin film device substrate according to claim 25 , wherein
the step of removing said peeling-off film comprises the step of making an etchant permeate through said gap space and thereby etching said peeling-off film.
27. A method of manufacturing a thin film device substrate according to claim 26 , wherein
said peeling-off film is made of chromium and said heat insulating film is made of porous silicon oxide.
28. A method of manufacturing a thin film device substrate according to claim 25 , wherein the step of peeling off said first substrate and said heat insulating film comprises the step of breaking mechanically, at least, one of said heat insulating film and said peeling-off film.
29. A method of manufacturing a thin film device substrate according to claim 16 , wherein the step of peeling off said first substrate and said heat insulating film comprises the step of dividing said layered structure into a plural number, prior to said peeling-off.
30. A method of manufacturing a thin film device substrate according to claim 16 , wherein said semiconductor film is made of silicon.
31. A method of manufacturing a thin film device substrate according to claim 16 , wherein said thin film device is a thin film transistor.