IP Library Granted Patent US 7,560,086
Granted Patent B2
US 7,560,086 · App. 10/977,083 · Granted Jul 14, 2009

Single crystal diamond having

Assignee: Apollo Diamond, Inc.
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Quick Facts
Patent No.
US 7,560,086
App. No.
10/977,083
Granted
Jul 14, 2009
Kind
B2
Abstract

Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.

Claims (7)

1. A synthetic diamond comprising an alloy single crystal diamond composition consisting of 12 C, 13 C, and phosphorous.

2. The diamond of claim 1 wherein the concentration of phosphorous is heavy.

3. The diamond of claim 1 wherein the diamond is n-type doped.

4. A synthetic diamond comprising:

an alloy single crystal diamond composition consisting of 12 C, 13 C, and phosphorous; and

a layer of boron doped single crystal diamond on the alloy to create a p-n junction.

5. The synthetic diamond of claim 4 having high levels of electrically active carriers.

Assignments (2)
SECURITY INTEREST Recorded Jan 16, 2015
From: SCIO DIAMOND TECHNOLOGY CORPORATION
To: HERITAGE GEMSTONE INVESTORS, LLC
Reel/Frame 034736/0179 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 4, 2013
From: APOLLO DIAMOND, INC.
To: SCIO DIAMOND TECHNOLOGY CORPORATION
Reel/Frame 030615/0853 →
Continuity (4)
Continuation 1040998200 · Apr 8, 2003
Division 0931232600 · May 14, 1999
Provisional Application 6008554200 · May 15, 1998
Related Publication 20050056206A1 · Mar 17, 2005