Boron doped single crystal diamond electrochemical synthesis electrode
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described., as well as a system for use in performing such a method, and articles incorporating such a composition.
1. An electrode comprising:
a CVD boron doped single crystal diamond electrode, the CVD boron doped single crystal diamond free of grain boundaries;
wherein the boron doped single crystal diamond is isotopically enriched with respect to at least one carbon isotope; and
wherein the CVD boron doped single crystal diamond is able to withstand several orders of magnitude higher current than a polycrystalline diamond electrode without catastrophic failure.
2. The electrode of claim 1 having minimal impurities other than boron.
3. The electrode of claim 1 having a life time of use significantly longer than polycrystalline diamond, and wherein the CVD boron doped single crystal diamond is able to withstand several orders of magnitude higher current than polycrystalline diamond without measurable erosion.
4. The electrode of claim 3 wherein the electrode shows substantially uniform wear.
5. The electrode of claim 1 wherein the single crystal diamond has a boron concentration ranging from approximately 0.005 parts per million to 10,000 parts per million.
6. The electrode of claim 1 wherein the single crystal diamond has a boron concentration ranging from approximately 0.05 parts per million to 3,000 parts per million.
7. The electrode of claim 1 having a resistivity of between approximately 100,000 ohm centimeters to approximately 0.01 ohm centimeters.
8. An electrode comprising:
a CVD boron conductively doped single crystal diamond electrode, the CVD conductively doped single crystal diamond substantially free of grain boundaries;
wherein the boron doped single crystal diamond is isotopically enriched with respect to at least one carbon isotope; and
wherein the CVD conductively doped single crystal diamond is able to withstand several orders of magnitude higher current than a polycrystalline diamond electrode without catastrophic failure.
9. The electrode of claim 8 having a life time of use significantly longer than polycrystalline diamond, and wherein the CVD boron doped single crystal diamond is able to withstand several orders of magnitude higher current than polycrystalline diamond without measurable erosion.
10. The electrode of claim 9 wherein the electrode shows substantially uniform wear.
11. The electrode of claim 8 wherein the single crystal diamond is doped with boron having a concentration ranging from approximately 0.005 parts per million to 10,000 parts per million.
12. The electrode of claim 8 wherein the single crystal diamond is doped with boron having a concentration ranging from approximately 0.05 parts per million to 3,000 parts per million.
13. The electrode of claim 8 having a resistivity of between approximately 100,000 ohm centimeters to approximately 0.01 ohm centimeters.
14. An electrode comprising a CVD boron doped single crystal diamond electrode having no grain boundaries, and a life time of use significantly longer than polycrystalline diamond
wherein the boron doped single crystal diamond is isotopically enriched with respect to at least one carbon isotope.
15. The electrode of claim 14 wherein the electrode shows substantially uniform wear, and wherein the CVD boron doped single crystal diamond is able to withstand several orders of magnitude higher current than polycrystalline diamond without measurable erosion.
16. The electrode of claim 14 wherein the single crystal diamond has a boron concentration ranging from approximately 0.005 parts per million to 10,000 parts per million.
17. The electrode of claim 14 wherein the single crystal diamond has a boron concentration ranging from approximately 0.05 parts per million to 3,000 parts per million.
18. The electrode of claim 14 having a resistivity of between approximately 100,000 ohm centimeters to approximately 0.01 ohm centimeters.
19. A device consisting essentially of:
a CVD boron doped single crystal diamond electrode, the CVD boron doped single crystal diamond electrode being free of grain boundaries;
wherein the boron doped diamond is isotopically enriched with respect to at least one carbon isotope; and
wherein the CVD boron doped single crystal diamond is able to withstand several orders of magnitude higher current than a polycrystalline diamond electrode without catastrophic failure as a result of being substantially free of grain boundaries.