Synthetic diamond having alternating layers with different concentrations of impurities
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described., as well as a system for use in performing such a method, and articles incorporating such a composition.
1 . A synthetic diamond comprising:
alternating layers of diamond having different concentrations of impurities.
2 . The method of claim 1 wherein selected alternating layers are doped with boron, and the other layers are undoped.
3 . The method of claim 2 wherein dislocations are suppressed between layers.
4 . The method of claim 3 wherein birefringence of the resulting diamond is minimized.
5 . The method of claim 1 wherein selected alternating layers are doped with nitrogen, and the other layers are undoped.
6 . The method of claim 5 wherein dislocations are suppressed between layers.
7 . The method of claim 6 wherein birefringence of the resulting diamond is minimized.
8 . A synthetic diamond comprising:
a heterostructure of alternating layers of 12 C to 13 C diamond.
9 . The diamond of claim 8 wherein the layers end in a 12 C diamond layer providing a base for a 12 C single crystal diamond.
10 . The diamond of claim 9 wherein the 12 C single crystal diamond is at least approximately 20 micrometers thick.
11 . The diamond of claim 8 wherein the layers end in a 13 C diamond layer providing a base for a 13 C single crystal diamond.
12 . The diamond of claim 11 wherein the 13 C single crystal diamond is at least approximately 20 micrometers thick.
13 . The diamond of claim 9 wherein the layers are not doped with nitrogen or boron.
14 . The diamond of claim 9 wherein 12 C layers are under tension and the 13 C layers are under compression.
15 . The diamond of claim 9 wherein the 13 C and 13 C layers are lattice mismatched and provide a strengthened diamond.
16 . The diamond of claim 9 wherein the 13 C layers are harder than the natural diamond.
17 . A synthetic diamond comprising a layer of continuously varying 12 C/ 13 C, changing from a lattice spacing of 12 C to a lattice spacing of 13 C.
18 . A synthetic diamond comprising:
a diamond plate; and
a single layer of diamond formed on the diamond plate and having an isotope concentration different from that of the diamond plate such that the diamond plate is strengthened without boron or nitrogen doping.
19 . The diamond of claim 12 wherein the single layer comprises 13 C diamond.
20 . The diamond of claim 13 wherein the single layer of 13 C diamond is doped with boron.
21 . The diamond of claim 20 wherein the single layer of boron doped 13 C diamond provides a substrate for semiconductor devices.
22 . The diamond of claim 21 wherein the substrate provides a high lateral rate of heat conduction.
23 . The diamond of claim 22 having a high axial rate of heat conduction.
24 . A synthetic diamond comprising:
a diamond layer of undoped natural carbon isotope; and
a single layer of 13 C diamond doped with boron formed on the undoped diamond layer such that a layer junction is formed with band gap discontinuities.
25 . The diamond of claim 24 wherein the layer of 13 C boron doped diamond has a wider bandgap than the undoped layer of diamond.