Method of creating a synthetic diamond
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.
1 . A method comprising:
creating a first layer of diamond using chemical vapor deposition and having a desired concentration of a selected impurity;
creating a second layer of diamond using chemical vapor deposition having a different concentration of impurities; and
repeating the first and second layers alternatively to form a synthetic diamond of a desired thickness.
2 . The method of claim 1 wherein the selected impurity comprises boron.
3 . The method of claim 2 wherein dislocations are suppressed between layers.
4 . The method of claim 3 wherein birefringence of the resulting diamond is minimized.
5 . The method of claim 1 wherein the selected impurity comprises nitrogen.
6 . The method of claim 1 wherein the selected impurity comprises an isotope of carbon.
7 . The method of claim 6 wherein the isotope comprises 13 C.
8 . A method comprising:
creating a first layer of diamond using chemical vapor deposition and having a desired concentration of a selected impurity;
creating a second layer of diamond using chemical vapor deposition having a different lattice constant than the first layer to create a desired lattice mismatch; and
repeating the first and second layers alternatively to form a synthetic diamond of a desired thickness.
9 . The method of claim 8 wherein the selected impurity comprises boron.
10 . The method of claim 8 wherein the selected impurity comprises an isotope of carbon.
11 . The method of claim 10 wherein the isotope comprises 13 C.
12 . A method comprising:
creating a first layer of 13 C isotope diamond using chemical vapor deposition and having a desired concentration of a selected impurity;
creating a second layer of 12 C isotope diamond using chemical vapor deposition; and
repeating the first and second layers alternatively to form a synthetic diamond of a desired thickness.
13 . The method of claim 12 wherein the carbon isotope layers are undoped.
14 . A method comprising creating a layer of diamond by chemical vapor deposition while varying a ratio of 12 C to 13 C to create a substrate for large 13 C mono-crystals.