IP Library Granted Patent US 7,221,599
Granted Patent B1
US 7,221,599 · App. 10/978,621 · Granted May 22, 2007

Polymer memory cell operation

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,221,599
App. No.
10/978,621
Filed
Nov 1, 2004
Granted
May 22, 2007
Kind
B1
Art Unit
2824
USPC
365/189.01
Abstract

Systems and methodologies are provided for activating a polymer memory cell(s) after production by subjecting the polymer memory cell to an electrical field, for an initialization thereof. Such initialization can facilitate the distribution and mobility of metal ions (or charged metallic molecules) within an active layer of the polymer memory cell. The memory cell can include various layers of alternating passive and active media, which are sandwiched between conducting electrode layers.

Claims (22)

1. A method of programming information in a polymer memory cell comprising:

initializing the polymer memory cell, comprising:

subjecting the polymer memory cell to a positive or negative electric field to provide a supply of ions and facilitate mobility of the ions within an active layer thereof, the polymer memory cell comprising the active layer and a passive layer situated between electrodes,

setting one or more predetermined threshold values to facilitate programming, and

removing the electric field when charged carriers exist in the active layer and the one or more predetermined threshold values are set;

applying an electric field pulse that exceeds a predetermined threshold value to the polymer memory cell; and

controlling at least one of an impedance of the polymer memory cell and current flowing through the polymer memory cell, to program the polymer memory cell.

2. The method of claim 1 further comprising comparing a current flowing through the polymer memory cell with a predetermined threshold value.

3. The method of claim 1 further comprising removing the electric field pulse based on an outcome of comparing a current flowing through the cell with a predetermined threshold value.

4. The method of claim 1 further comprising applying a further electric pulse to read information from the polymer memory cell.

5. The method of claim 1 further comprising applying a reverse electric field pulse to erase programmed information.

6. The method of claim 1 , the electric field with a strength of 2–4 megavolts per centimeter.

7. The method of claim 1 , the active layer is a polymer layer.

8. The method of claim 1 , further comprising forming the active layer via a chemical vapor deposition process.

9. The method of claim 1 , the active layer comprises metal particles and/or metal containing molecular groups.

10. The method of claim 9 , the metal containing molecular groups comprise molecular units with at least one of: redox active metals, metallocenes complex, or polypyridine metal complex.

11. The method of claim 1 , the active layer comprises at least one of: polyaniline, polythiophene, polypyrrole, polysilane, polystyrene, polyfuran, polyindole, polyazulene, polyphenylene, polyfluorene, polypyridine, polybipyridine, polyphthalocyanine, polysexithiofene, poly(siliconoxohemiporphyrazine), poly(germaniumoxohemiporphyrazine), or poly(ethylenedioxythiophene) or copolymers thereof.

12. The method of claim 1 , the active layer comprises at least one of: hydrocarbons, organic molecules with donor and acceptor properties, metallo-organic complexes, porphyrin, phthalocyanine, or hexadecafluorophthalocyanine.

13. The method of claim 12 , the organic molecules with donor and acceptor properties comprises at least one of: N-Ethylcarbazole, tetrathiotetracene, tetrathiofulvalene, tetracyanoquinodimethane, tetracyanoethylene, cloranol, or dinitrophenyl.

14. The method of claim 12 , the metallo-organic complexes are selected from the group of bisdiphenylglyoxime, bisorthophenylenediimine, and tetraaza-tetramethylannulene.

15. The method of claim 1 , the active layer comprises organic material selected from the group comprising of polyacetylene, polyphenylacetylene, polydiphenylacetylene, polyaniline, poly(p-phenylene vinylene), poly(phenylene), poly(fluorene), polythiophene, polyporphyrins, porphyrinic macrocycles, thiol derivatized polyporphyrins, polymetallocenes, polyferrocenes, polyphthalocyanines, polyvinylenes, and polystiroles.

16. The method of claim 1 , the active layer comprises material selected from the group comprising of electric dipole elements, polymer ferroelectrics clusters, non-organic ferro-electrics, salts, alkalis, acids, and water molecules.

Assignments (1)
CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST. Recorded Nov 3, 2020
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 058002/0470 →