IP Library Granted Patent US 7,151,411
Granted Patent B2
US 7,151,411 · App. 10/980,394 · Granted Dec 19, 2006

Amplifier system and method

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Quick Facts
Patent No.
US 7,151,411
App. No.
10/980,394
Granted
Dec 19, 2006
Kind
B2
Abstract

An embodiment of the present invention provides an amplifier system, comprising at least one variable impedance matching network, the output of which provides the input to at least one amplifier stage or provides an output of the power amplifier itself, and a bias network associated with the at least one amplifier stage. The amplifier system may further comprise a controller enabling impedance control to the at least one variable impedance matching network and a supply voltage provided to the at least one variable impedance network and/or the at least one amplifier stage and wherein the at least one variable impedance network and the at least one amplifier stage may be a plurality of impedance networks connected to a plurality of amplifier stages. The at least one variable impedance network may include at least one variable capacitor and the at least one variable capacitor may be a voltage tunable dielectric capacitor which may include Parascan® voltage tunable dielectric material.

Claims (30)

1. An amplifier system, comprising:

at least one variable impedance matching network, the output of which provides the input to at least one amplifier stage or provides an output of the power amplifier itself, wherein said at least one variable impedance network includes at least one voltage tunable dielectric capacitor with said tunable dielectric including at least one metal silicate phase; and

a bias network associated with said at least one amplifier stage.

2. The amplifier system of claim 1 , wherein said metal silicates include metals from Group 2A of the Periodic Table.

3. The amplifier system of claim 2 , wherein said metal silicates are selected from the group consisting of: Mg2SiO4, CaSiO3, BaSiO3 and SrSiO3.

4. The amplifier system of claim 1 , wherein said at least one variable impedance network and said at least one amplifier stage is a plurality of impedance networks connected to a plurality of amplifier stages.

5. The amplifier system of claim 1 , wherein said tunable dielectric includes at least two additional metal oxide phases.

6. The amplifier system of claim 5 , wherein said tunable dielectric includes additional metal oxides that include metals from Group 2A of the Periodic Table.

7. The amplifier system of claim 6 , wherein said voltage tunable dielectriccapacitor includes Parascan® voltage tunable dielectric material.

8. The amplifier system of claim 3 , wherein said impedance and supply voltage control applied to said at least one amplifier stages within a transmission system enable a single power amplifier to operate in multiple including both saturated and linear modes as applied in GSM, EDGE, WCDMA, and CDMA.

9. The amplifier system of claim 3 , wherein said impedance control may include both open and closed loop power control topologies.

10. The amplifier system of claim 1 , wherein said at least one variable impedance matching network is a lumped element inductor/capacitor impedance matching network.

11. A method of varying the impedance in an amplifier system, comprising:

varying the impedance in at least one variable impedance matching network to provide a variable input or output impedance to at least one amplifier stage by applying a control voltage to at least one variable capacitor within said at least one variable impedance network in order to vary the impedance of said at least one amplifier stage, wherein said at least one voltage tunable dielectric capacitor includes tunable dielectric including at least one metal silicate phase.

12. The method of varying the impedance in an amplifier system of claim 11 , wherein said at least one metal silicate include metals from Group 2A of the Periodic Table.

13. The method of varying the impedance in an amplifier system of claim 12 , wherein said at least one metal silicate is selected from the group consisting of: Mg2SiO4, CaSiO3, BaSiO3 and SrSiO3.

14. The method of varying the impedance in an amplifier system of claim 11 , wherein said at least one variable impedance network and said at least one amplifier stage is a plurality of impedance networks connected to a plurality of amplifier stages.

15. The method of varying the impedance in an amplifier system of claim 11 , wherein said tunable dielectric includes at least two additional metal oxide phases.

16. The method of varying the impedance in an amplifier system of claim 15 , wherein said metal oxides include metals from Group 2A of the Periodic.

17. The method of varying the impedance in an amplifier system of claim 16 , wherein said voltage tunable dielectric capacitor includes Parascan® voltage tunable dielectric material.

18. The method of varying the impedance in an amplifier system of claim 13 , wherein said impedance and supply voltage control applied to said at least one amplifier stages within a transmission system thereby enable a single power amplifier to operate in multiple including both saturated and linear modes as applied in GSM, EDGE, WCDMA, and CDMA.

19. The method of varying the impedance in an amplifier system of claim 13 , wherein said impedance control may include both open and closed loop power control topologies.

20. The method of varying the impedance in an amplifier system of claim 11 , wherein said at least one variable impedance matching network is a lumped element inductor/capacitor impedance matching network.

21. A system capable of impedance matching, comprising:

an apparatus connected an amplifier via an impedance matching network; and

said impedance matching network includes at least one voltage tunable dielectric capacitor enabling the ability to vary the impedance of said impedance matching network, wherein said at least one voltage tunable dielectric capacitor includes a tunable dielectric material which includes at least one metal silicate phase.

22. The system of claim 21 , wherein said metal silicates include metals from Group 2A of the Periodic Table.

23. The system of claim 22 , wherein said voltage tunable dielectric capacitor includes Parascan® voltage tunable dielectric material.

24. The system of claim 21 , wherein said impedance matching network may be applied to both open and closed loop power control topologies.

25. The system of claim 1 , wherein said apparatus is selected from the group consisting of: antenna, filter, subsequent amplifier stage, diplexer, switch, mixer, oscillator, up converter, or multiplier.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2020
From: BLACKBERRY LIMITED
To: NXP USA, INC.
Reel/Frame 052095/0443 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2013
From: RESEARCH IN MOTION RF, INC.
To: RESEARCH IN MOTION CORPORATION
Reel/Frame 030909/0908 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2013
From: RESEARCH IN MOTION CORPORATION
To: BLACKBERRY LIMITED
Reel/Frame 030909/0933 →
CHANGE OF NAME Recorded Jul 31, 2012
From: PARATEK MICROWAVE, INC.
To: RESEARCH IN MOTION RF, INC.
Reel/Frame 028686/0432 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2005
From: MARTIN, JAMES; KHAYO, IZZAC; KEENAN, RICH; KARAVANIC, VALTER; MENDOLIA, GREG
To: PARATEK MICROWAVE, INC.
Reel/Frame 016419/0867 →