IP Library Granted Patent US 7,031,077
Granted Patent B2
US 7,031,077 · App. 10/982,870 · Granted Apr 18, 2006

Optical reduction method with elimination of reticle diffraction induced bias

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Quick Facts
Patent No.
US 7,031,077
App. No.
10/982,870
Granted
Apr 18, 2006
Kind
B2
Abstract

An optical reduction system for use in the photolithographic manufacture of semiconductor devices having one or more quarter-wave plates operating near the long conjugate end. A quarter-wave plate after the reticle provides linearly polarized light at or near the beamsplitter. A quarter-wave plate before the reticle provides circularly polarized or generally unpolarized light at or near the reticle. Additional quarter-wave plates are used to further reduce transmission loss and asymmetries from feature orientation. The optical reduction system provides a relatively high numerical aperture of 0.7 capable of patterning features smaller than 0.25 microns over a 26 mm×5 mm field. The optical reduction system is thereby well adapted to a step and scan microlithographic exposure tool as used in semiconductor manufacturing. Several other embodiments combine elements of different refracting power to widen the spectral bandwidth which can be achieved.

Claims (14)

1. A method for producing a lithography beam, comprising:

generating an exposure beam;

polarizing the exposure beam to produce a circularly polarized exposure beam; and

illuminating a reticle with the circularly polarized exposure beam to produce an output beam having feature details of the reticle.

2. The method of claim 1 , further comprising:

exposing a wafer with the output beam.

3. The method of claim 1 , wherein the polarizing step includes passing the exposure beam through a quarter-wave plate.

4. The method of claim 1 , further comprising:

polarizing the output beam to produce a linearly polarized output beam.

5. The method of claim 4 , wherein the second polarizing step includes passing the exposure beam through a quarter-wave plate.

6. The method of claim 4 , further comprising:

exposing a wafer with the linearly polarized output beam.

7. The method of claim 1 , further comprising:

correcting aberrations in at least one aberration selected from the group of: astigmatism, field curvature, distortion, spherical aberration, and coma.

Assignments (5)
CERTIFICATE OF AMENDMENT Recorded Jun 27, 2005
From: SILICON VALLEY GROUP, INC.
To: ASML US, INC.
Reel/Frame 016190/0713 →
CERTIFICATE OF CONVERSION Recorded Jun 27, 2005
From: ASML US, INC.
To: ASML US, LLC
Reel/Frame 016190/0820 →
CONFIRMATORY ASSIGNMENT Recorded Jun 27, 2005
From: ASML US, INC
To: ASML HOLDING N.V.
Reel/Frame 016190/0868 →
MERGER Recorded Jun 27, 2005
From: ASML US, LLC
To: ASML US, INC.
Reel/Frame 016190/0887 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 27, 2005
From: KREUZER, JUSTIN L.
To: SILICON VALLEY GROUP, INC.
Reel/Frame 016190/0960 →