Method of manufacturing semiconductor device and method of treating semiconductor surface

1. A method of manufacturing a semiconductor device, comprising:

exposing a semiconductor surface of a substrate;

annealing the substrate in a hydrogen atmosphere at a pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to planarize the semiconductor surface; and

forming a gate insulator film on the semiconductor surface,

wherein the planarizing reduces a standard deviation of roughness (Rms) to 0.5 μm or less.

2. A method of manufacturing a semiconductor device according to claim 1 , wherein in the step of annealing the substrate, said hydrogen pressure is maintained between 300 Torr and 500 Torr.

3. A method of manufacturing a semiconductor device according to claim 1 , wherein the pressure of the hydrogen atmosphere comprises a hydrogen partial pressure.

4. A method of manufacturing a semiconductor device, comprising:

forming a trench in a semiconductor substrate;

annealing the semiconductor substrate in a hydrogen atmosphere at a hydrogen pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to round corners of the trench and to planarize a sidewall of the trench; and

forming a gate insulator film on an inner surface of the trench,

wherein the planarizing reduces a standard deviation of roughness (Rms) to 0.5 μm or less.

5. A method of manufacturing a semiconductor device according to claim 4 , wherein in the step of annealing the semiconductor substrate, said hydrogen pressure is maintained between 300 Torr and 500 Torr.

6. A method of manufacturing a semiconductor device according to claim 4 , wherein the pressure of the hydrogen atmosphere comprises a hydrogen partial pressure.

7. A method of treating a semiconductor surface, comprising:

annealing a substrate having an exposed semiconductor surface in a hydrogen atmosphere at a hydrogen pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to planarize the exposed semiconductor surface,

wherein the annealing planarizes the exposed semiconductor surface to a standard deviation of roughness (Rms) to 0.5 μm or less.

8. A method of manufacturing a semiconductor device according to claim 7 , wherein in the step of annealing the substrate, said hydrogen pressure is maintained between 300 Torr and 500 Torr.

9. A method of treating a semiconductor device according to claim 7 , wherein the pressure of the hydrogen atmosphere comprises a hydrogen partial pressure.

10. A method of treating a semiconductor surface, comprising:

annealing a substrate having an exposed semiconductor surface in an atmosphere of a gas mixture containing an inert gas and hydrogen at a hydrogen partial pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to planarize the exposed semiconductor surface,

wherein the planarizing reduces the standard deviation of roughness (Rms) to 0.5 μm or less.

11. A method of manufacturing a semiconductor device according to claim 10 , wherein in the step of annealing the substrate, said hydrogen partial pressure is maintained between 300 Torr and 500 Torr.

12. A method of manufacturing a semiconductor device comprising:

exposing a semiconductor surface of a substrate;

annealing the substrate in a hydrogen atmosphere at a pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to planarize the semiconductor surface; and

forming a gate insulator film on the semiconductor surface,

wherein the hydrogen atmosphere is 100% hydrogen.

13. A method of manufacturing a semiconductor device comprising:

forming a trench in a semiconductor substrate;

annealing the semiconductor substrate in a hydrogen atmosphere at a hydrogen pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to round corners of the trench and to planarize a sidewall of the trench; and

forming a gate insulator film on an inner surface of the trench,

wherein the hydrogen atmosphere is 100% hydrogen.

14. A method of treating a semiconductor device comprising:

annealing a substrate having an exposed semiconductor surface in a hydrogen atmosphere at a hydrogen pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to planarize the exposed semiconductor surface,

wherein the hydrogen atmosphere is 100% hydrogen.

15. A method of treating a semiconductor device comprising:

annealing a substrate having an exposed semiconductor surface in an atmosphere of a gas mixture containing an inert gas and hydrogen at a hydrogen partial pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to planarize the exposed semiconductor surface,

wherein the hydrogen atmosphere is 100% hydrogen.