Integrated sub-nanometer-scale electron beam systems

1. A solid state sub-nanometer-scale electron beam emitter comprising a nano-tip electron emitter and tunnel emission junction formed on substrate, an initial electron beam extraction electrode, and an electron beam lens wherein said electron beam lens includes a nano-sandwich Einzel lens electrode and wherein said nano-sandwich Einzel lens electrode includes a lower primary electron beam acceleration electrode, an annular metal electrode, and an upper metal membrane electrode.

2. The emitter as recited in claim 1 , wherein said initial electron beam extraction electrode also forms said lower primary electron beam acceleration electrode of said nano-sandwich Einzel lens electrode.

3. The emitter as recited in claim 1 , further comprising a spacing layer disposed between said initial electron beam extraction electrode and said lower metal membrane and primary electron beam acceleration electrode of said nano-sandwich Einzel lens electrode.

4. The emitter as recited in claim 1 , wherein said lower primary electron beam acceleration electrode has a thickness between about 1 nanometer and about 10 nanometers, said annular metal electrode has a thickness between about 1 nanometer and about 10 nanometers, and said upper metal membrane electrode has a thickness between about 1 nanometer and about 10 nanometers.

5. The emitter as recited in claim 4 , wherein said annular metal electrode has an opening through which electrons pass of between about 10 nanometers and about 100 nanometers in diameter.

6. The emitter as recited in claim 1 , wherein said nano-sandwich Einzel lens electrode comprises an interior region devoid of material and forming a nano-vacuum chamber.

7. The emitter as recited in claim 1 , wherein said nano-sandwich Einzel lens electrode comprises an interior region consisting essentially of an electron transparent material.

8. The emitter as recited in claim 1 , further comprising an electron transparent protective layer disposed upon said nano-sandwich Einzel lens electrode.

9. The emitter as recited in claim 8 , wherein said electron transparent protective layer consists essentially of a material selected from the group consisting of diamond, silicon nitride, and aluminum nitride.

10. The emitter as recited in claim 1 , wherein said emitter is formed with a substantially cylindrical shape.

11. The emitter as recited in claim 1 , wherein said substrate consists essentially of silicon.

12. The emitter as recited in claim 1 , wherein said nano-tip electron emitter is embedded in a spacing layer that separates said nano-tip electron emitter from said initial electron beam extraction electrode.

13. The emitter as recited in claim 12 , wherein said spacing layer consists essentially of diamond.

14. The emitter as recited in claim 1 , wherein said nano-tip electron emitter is formed with a conical shape.

15. The emitter as recited in claim 14 , wherein said nano-tip electron emitter extends from said substrate a distance of between about 20 nanometers and about 80 nanometers.

16. The emitter as recited in claim 1 , wherein said nano-tip electron emitter comprises a tungsten tetrahedral tip.

17. The emitter as recited in claim 1 , wherein said nano-tip electron emitter comprises a carbon nanotube.

18. The emitter as recited in claim 1 , wherein said nanotip electron emitter comprises a C.sub.60 buckyball.

19. A solid state sub-nanometer-scale electron beam emitter comprising a nano-tip electron emitter and tunnel emission junction formed on substrate, an initial electron beam extraction electrode, and a protective layer disposed on said initial electron beam extraction electrode.

20. A nano-sandwich Einzel lens for directing an electron beam, said lens comprising a lower primary electron beam acceleration electrode, an annular metal electrode, and an upper metal membrane electrode.

21. The lens as recited in claim 20 , wherein said lower primary electron beam acceleration electrode is separated from said annular metal electrode by a first electron transparent spacing layer and said annular metal electrode is separated from said upper metal membrane electrode by a second electron transparent spacing layer.

22. The lens as recited in claim 21 , wherein said first electron transparent spacing layer and said second electron transparent spacing layer consist essentially of a material selected from the group consisting of diamond, silicon nitride, and aluminum nitride.

23. The lens as recited in claim 20 , wherein an electron directing voltage is applied to said annular metal electrode.

24. The lens as recited in claim 20 , wherein said annular metal electrode is unitary.

25. The lens as recited in claim 20 , wherein said annular metal electrode is segmented into at least a first segment and a second segment.

26. The lens as recited in claim 25 , wherein a first electron directing voltage is applied to said first segment of said annular metal electrode and a second electron directing voltage is applied to said second segment of said annular metal electrode.

27. The lens as recited in claim 25 , wherein said annular metal electrode is segmented into four segments at approximately 90 degree intervals.