Optical enhancement of integrated circuit photodetectors

1. A semiconductor integrated circuit structure, comprising:

a light sensitive device integral with a semiconductor substrate, wherein the semiconductor substrate is silicon;

a first dielectric layer disposed over the light sensitive device, wherein light is transmittable though the first dielectric layer and wherein the first dielectric layer is fabricated from a silicide blocking material; and

a second dielectric layer disposed over the first dielectric layer, wherein light is transmittable through the second dielectric layer, wherein index of refraction of the first dielectric layer at a preselected light frequency is within twenty-five percent of the square root of the product of index of refraction of the semiconductor substrate and index of refraction of the second dielectric layer, and wherein thickness of the first dielectric layer is within twenty-five percent of length of a quarter wavelength of light at the preselected frequency in the first dielectric layer.

2. The semiconductor integrated circuit structure as recited in claim 1 , wherein the second dielectric layer comprises silicon dioxide.

3. The semiconductor integrated circuit structure as recited in claim 1 , wherein the light sensitive device comprises a first semiconductor layer and a second semiconductor layer integral with the semiconductor substrate, wherein the doping of the first and second semiconductor layers is such that a photodiode is formed by the first and second semiconductor layers.

4. The semiconductor integrated circuit structure as recited in claim 1 , wherein the first dielectric layer is a silicon oxynitride having chemical formula Si X O Y N Z , wherein Si, O, and N are the chemical symbols respectively for silicon, oxygen, and nitrogen and wherein X, Y, and Z are the fractional atomic compositions of respectively silicon, oxygen, and nitrogen.

5. The semiconductor integrated circuit structure as recited in claim 4 , wherein the second dielectric layer comprises silicon dioxide.

6. The semiconductor integrated circuit structure as recited in claim 4 , wherein the light sensitive device comprises a first semiconductor layer and a second semiconductor layer integral with the semiconductor substrate, wherein the doping of the first and second semiconductor layers is such that a photodiode is formed by the first and second semiconductor layers.

7. The semiconductor integrated circuit structure as recited in claim 1 , further comprising:

a second light sensitive device integral with the semiconductor substrate;

a cover dielectric layer disposed over the second light sensitive device, wherein light is transmittable though the cover dielectric layer; and

a lens-formation dielectric layer disposed over the cover dielectric layer, wherein the lens-formation dielectric layer and the first dielectric layer are the same layer but of different thickness and different contour, wherein the lens-formation dielectric layer forms an embedded convex microlens, wherein light is transmittable through the lens-formation dielectric layer, and wherein the microlens directs light onto the second light sensitive device.

8. The semiconductor integrated circuit structure as recited in claim 7 , wherein the light sensitive device comprises a first semiconductor layer and a second semiconductor layer integral with the semiconductor substrate, wherein the doping of the first and second semiconductor layers is such that a photodiode is formed by the first and second semiconductor layers.

9. The semiconductor integrated circuit structure as recited in claim 7 , wherein the lens-formation dielectric layer is a silicon oxynitride having chemical formula Si X O Y N Z , wherein Si, O, and N are the chemical symbols respectively for silicon, oxygen, and nitrogen and wherein X, Y, and Z are the fractional atomic compositions of respectively silicon, oxygen, and nitrogen.

10. The semiconductor integrated circuit structure as recited in claim 7 , wherein the cover dielectric layer is field oxide.

11. A method for fabricating a semiconductor integrated circuit structure, comprising:

creating a light sensitive device integral with a semiconductor substrate, wherein the semiconductor substrate is silicon;

disposing a first dielectric layer over the light sensitive device, wherein light is transmittable though the first dielectric layer and wherein the first dielectric layer is fabricated from a silicide blocking material; and

disposing a second dielectric layer over the first dielectric layer, wherein light is transmittable through the second dielectric layer, wherein index of refraction of the first dielectric layer for a preselected light frequency is within twenty-five percent of the square root of the product of index of refraction of the semiconductor substrate and index of refraction of the second dielectric layer, and wherein thickness of the first dielectric layer is within twenty-five percent of length of a quarter wavelength of light at the preselected frequency in the first dielectric layer.

12. The method as recited in claim 11 , wherein the second dielectric layer comprises silicon dioxide.

13. The method as recited in claim 11 , wherein the light sensitive device comprises a first semiconductor layer and a second semiconductor layer integral with the semiconductor substrate, wherein the doping of the first and second semiconductor layers is such that a photodiode is formed by the first and second semiconductor layers.

14. The method as recited in claim 11 , wherein the first dielectric layer is a silicon oxynitride having chemical formula Si X O Y N Z , wherein Si, O, and N are the chemical symbols respectively for silicon, oxygen, and nitrogen and wherein X, Y, and Z are the fractional atomic compositions of respectively silicon, oxygen, and nitrogen.

15. The method as recited in claim 14 , wherein the second dielectric layer comprises silicon dioxide.

16. The method as recited in claim 14 , wherein the light sensitive device comprises a first semiconductor layer and a second semiconductor layer, wherein the doping of the first and second semiconductor layers is such that a photodiode is formed by the first and second semiconductor layers.

17. The method structure as recited in claim 11 , further comprising:

creating a second light sensitive device integral with the semiconductor substrate;

disposing a cover dielectric layer over the second light sensitive device, wherein light is transmittable though the cover dielectric layer; and

disposing a lens-formation dielectric layer over the cover dielectric layer, wherein the lens-formation dielectric layer and the first dielectric layer are the same layer but of different thickness and different contour, wherein the lens-formation dielectric layer forms an embedded convex microlens, wherein light is transmittable through the lens-formation dielectric layer, and wherein the microlens directs light onto the second light sensitive device.

18. The method as recited in claim 17 , wherein the lens-formation dielectric layer is a silicon oxynitride having chemical formula Si X O Y N Z , wherein Si, O, and N are the chemical symbols respectively for silicon, oxygen, and nitrogen and wherein X, Y, and Z are the fractional atomic compositions of respectively silicon, oxygen, and nitrogen.

19. The method as recited in claim 17 , wherein the cover dielectric layer is field oxide.

20. The method as recited in claim 17 , wherein the step disposing a lens-formation dielectric layer over the cover dielectric layer comprises:

applying a layer of photoresist over the cover dielectric layer;

exposing the photoresist in a preselected pattern;

developing the photoresist resulting in removal of the photoresist in conformance with the preselected pattern;

reflowing the remaining photoresist; and

etching the lens-formation dielectric layer and the remaining photoresist with an etch having low selectivity between the lens-formation dielectric layer and the photoresist.

21. A semiconductor integrated circuit structure, comprising:

a light sensitive device integral with a semiconductor substrate;

a cover dielectric layer disposed over the light sensitive device, wherein light is transmittable though the cover dielectric layer; and

a lens-formation dielectric layer comprising a silicon-rich oxynitride having an index of refraction adjustable in the range of 1.70 to 1.85 by changing the relative atomic percentages of silicon, oxygen and nitrogen, the lens-formation dielectric layer disposed over the cover dielectric layer, wherein the lens-formation dielectric layer forms an embedded convex microlens, wherein light is transmittable through the lens-formation dielectric layer, wherein the microlens directs light onto the light sensitive device, and wherein the lens-formation dielectric layer also overlays areas of the semiconductor integrated circuit structure external to that area overlaid by the embedded convex microlens.

22. The semiconductor integrated circuit structure as recited in claim 21 , wherein the cover dielectric layer is field oxide.

23. The semiconductor integrated circuit structure as recited in claim 21 , wherein the light sensitive device comprises a first semiconductor layer and a second semiconductor layer integral with the semiconductor substrate, wherein the doping of the first and second semiconductor layers is such that a photodiode is formed by the first and second semiconductor layers.

24. The semiconductor integrated circuit structure as recited in claim 21 , wherein the silicon-rich oxynitride has a chemical formula Si X O Y N Z , wherein Si, O, and N are the chemical symbols respectively for silicon, oxygen, and nitrogen and wherein X, Y, and Z are the fractional atomic compositions of respectively silicon, oxygen, and nitrogen.

25. The semiconductor integrated circuit structure as recited in claim 7 , wherein the lens-formation dielectric layer blocks formation of silicides.

26. The method as recited in claim 17 , wherein the lens-formation dielectric layer blocks formation of silicides.

27. The semiconductor integrated circuit structure as recited in claim 21 , wherein the lens-formation dielectric layer blocks formation of silicides.

28. The semiconductor integrated circuit structure as recited in claim 21 , wherein index of retraction of the lens-formation dielectric layer at a preselected light frequency is within twenty-five percent of the square root of the product of index of refraction of the semiconductor substrate and index of refraction of an additional oxide layer overlaying the lens-formation dielectric layer and wherein thickness of the lens-formation dielectric layer overlaying areas of the semiconductor integrated circuit structure external to that area overlaid by the embedded convex microlens is within twenty-five percent of length of a quarter wavelength of light at the preselected frequency in the lens-formation dielectric layer.