Method of evaluating characteristics of semiconductor memory element, and method of extracting model parameter of semiconductor memory element
View Patent ↗A characteristic evaluating method of precisely obtaining a resistance value of an offset region in a semiconductor memory element constructed so that the resistance value of the offset region positioned below a memory function element formed on one side or both sides of a gate electrode changes according to an amount of charges or a polarization state of charges accumulated in said memory function element includes: a step of obtaining each of a resistance value between two diffusion regions inclusive formed on both sides of a channel region disposed just below the gate electrode of the semiconductor memory element via a gate insulating film, a resistance value of the channel region, and a resistance value of the diffusion regions; and a step of calculating the resistance value of the offset region which isolates the channel region and the diffusion region from each other on the basis of a result of subtracting the resistance value of the channel region and the resistance value of the diffusion regions from the resistance value between the two diffusion regions.
1. A method of evaluating characteristics of a semiconductor memory element, said semiconductor memory element having
a gate electrode formed over a semiconductor layer via a gate insulating film;
a channel region disposed just below said gate electrode via said gate insulating film;
two diffusion regions formed on both sides of said channel region;
a memory function element having a charge retaining function, formed on one side or both sides of said gate electrode; and
an offset region positioned below said memory function element and isolating said channel region and said diffusion region from each other,
said diffusion region formed on the side where said memory function element exists and said channel region being isolated from each other by said offset region, and a resistance value of said offset region changing according to an amount of charges or polarization state of charges accumulated in said memory function element, wherein
said method comprises steps of
obtaining each of a resistance value between said two diffusion regions inclusive of said semiconductor memory element, a resistance value of said channel region, and a resistance value of said diffusion regions; and
calculating the resistance value of said offset region on the basis of a result of subtracting the resistance value of said channel region and the resistance value of said diffusion regions from the resistance value between said two diffusion regions inclusive.
2. The method according to claim 1 , wherein
a resistance value obtained from said semiconductor memory element in which length of said gate electrode is sufficiently larger than length of said offset region to a direction in which said two diffusion regions are apart from each other is used to obtain the resistance value between said two diffusion regions inclusive.
3. The method according to claim 1 , wherein
a resistance value obtained from an IGFET for channel region resistance evaluation in which said diffusion region extends to a position below the gate electrode is used to obtain the resistance value of said channel region.
4. The method according to claim 3 , wherein
said semiconductor memory element and said IGFET for channel region resistance evaluation are formed on the same semiconductor substrate.
5. The method according to claim 1 , wherein
a resistance value of a diffusion region for resistance evaluation obtained from a device for resistance evaluation constructed by the diffusion region for resistance evaluation formed over a semiconductor layer and a plurality of electrodes provided over said diffusion region for resistance evaluation is used to obtain the resistance value of said diffusion region.
6. The method according to claim 5 , wherein
said semiconductor memory element and said device for resistance evaluation are formed on the same semiconductor substrate.
7. The method according to claim 1 , wherein
the resistance value of said offset region is calculated as a variable resistance value which changes according to an amount of charges or polarization state of charges accumulated in said memory function element.
8. The method according to claim 1 , wherein
the resistance value of said offset region is calculated as a variable resistance value which changes according to potential of said gate electrode.
9. The method according to claim 8 , wherein
the resistance value of said offset region is calculated as a variable resistance value which changes according to potential of said semiconductor layer.
10. The method according to claim 8 , wherein
the resistance value of said offset region is calculated as a variable resistance value which changes according to a potential difference between said two diffusion regions.
11. The method according to claim 10 , wherein
the resistance value of said offset region adjacent to a source diffusion region serving as a source electrode at the time of reading operation out of said two diffusion regions is set to be constant with respect to potential of said source diffusion region.
12. A method of extracting a model parameter for a circuit simulation for a semiconductor memory element, said semiconductor memory element having
a gate electrode formed over a semiconductor layer via a gate insulating film;
a channel region disposed just below said gate electrode via said gate insulating film;
two diffusion regions formed on both sides of said channel region;
a memory function element having a charge retaining function, formed on one side or both sides of said gate electrode; and
an offset region positioned below said memory function element and isolating said channel region and said diffusion regions from each other,
said diffusion region formed on the side where said memory function element exists and said channel region being isolated from each other by said offset region, and a resistance value of said offset region changing according to an amount of charges or a polarization state of charges accumulated in said memory function element, wherein
said method comprises steps of
modeling the resistance value of said offset region as a variable resistance value which changes according to the potential of each of said gate electrode and said semiconductor layer by using a model formula of:
Rchos=A ×exp { B ×( Vgs+C×Vbs )}+ D
where a potential on the low potential side of said two diffusion regions is used as a reference potential, the resistance value of said offset region is set as Rchos, the potential of said gate electrode is set as Vgs, the potential of said semiconductor layer is set as Vbs, and A, B, C, and D are set as fitting parameters;
calculating the resistance value of said offset region by using the method according to claim 9 ; and
determining said fitting parameters so that the resistance value of said offset region calculated by said characteristic evaluating method coincides with the resistance value of said offset region modeled by using said model formula, in order to independently extract a model parameter of the resistance value of said offset region separately from a model parameter for a simulation of an IGFET.
13. A method of extracting a model parameter for a circuit simulation for a semiconductor memory element, said semiconductor memory element having
a gate electrode formed over a semiconductor layer via a gate insulating film;
a channel region disposed just below said gate electrode via said gate insulating film;
two diffusion regions formed on both sides of said channel region;
a memory function element having a charge retaining function, formed on one side or both sides of said gate electrode; and
an offset region positioned below said memory function element and isolating said channel region and said diffusion regions from each other,
said diffusion region formed on the side where said memory function element exists and said channel region being isolated from each other by said offset region, and a resistance value of said offset region changing according to an amount of charges or a polarization state of charges accumulated in said memory function element, wherein
said method comprises steps of
modeling the resistance value of said offset region as a variable resistance value which changes according to the potential difference between said two diffusion regions by using a model formula of:
Rchos=Rchos 0×{1+ E ×( Vds−Vds 0)}
where the resistance value of said offset region is set as Rchos, the potential difference between said two diffusion regions is set as Vds, a sufficiently low potential difference between said two diffusion regions when said IGFET is in a linear region is set as Vds 0 , Rchos at the time Vds=Vds 0 is set as Rchos 0 , and E is set as a fitting parameter;
calculating the resistance value of said offset region by using the method according to claim 10 ; and
determining said fitting parameter so that the resistance value of said offset region calculated by said characteristic evaluating method coincides with the resistance value of said offset region modeled by using said model formula, in order to independently extracting a model parameter of the resistance value of said offset region separately from a model parameter for a simulation of an IGFET.
14. A method of extracting a model parameter for a circuit simulation for a semiconductor memory element, said semiconductor memory element having
a gate electrode formed over a semiconductor layer via a gate insulating film;
a channel region disposed just below said gate electrode via said gate insulating film;
two diffusion regions formed on both sides of said channel region;
a memory function element having a charge retaining function, formed on one side or both sides of said gate electrode; and
an offset region positioned below said memory function element and isolating said channel region and said diffusion regions from each other,
said diffusion region formed on the side where said memory function element exists and said channel region being isolated from each other by said offset region, and a resistance value of said offset region changing according to an amount of charges or polarization state of charges accumulated in said memory function element, wherein
said method comprises steps of
modeling the resistance value of said offset region as a variable resistance value which changes according to the potential difference between said two diffusion regions by using a model formula of:
Rchos=Rchos 0×{1+ E ×( Vds−Vds 0)}
where the resistance value of said offset region is set as Rchos, the potential difference between said two diffusion regions is set as Vds, a sufficiently low potential difference between said two diffusion regions when said IGFET is in a linear region is set as Vds 0 , Rchos at the time Vds=Vds 0 is set as Rchos 0 , and E is set as a fitting parameter;
calculating the resistance value of said offset region by using the method according to claim 11 ; and
determining said fitting parameter so that the resistance value of said offset region calculated by said characteristic evaluating method coincides with the resistance value of said offset region modeled by using said model formula, in order to independently extract a model parameter of the resistance value of said offset region separately from a model parameter for a simulation of an IGFET.
15. A method of extracting a model parameter for a circuit simulation for a semiconductor memory element, said semiconductor memory element having
a gate electrode formed over a semiconductor layer via a gate insulating film;
a channel region disposed just below said gate electrode via said gate insulating film;
two diffusion regions formed on both sides of said channel region;
a memory function element having a charge retaining function, formed on one side or both sides of said gate electrode; and
an offset region positioned below said memory function element and isolating said channel region and said diffusion regions from each other,
said diffusion region formed on the side where said memory function element exists and said channel region being isolated from each other by said offset region, and a resistance value of said offset region changing according to an amount of charges or a polarization state of charges accumulated in said memory function element, wherein
said method comprises steps of
calculating the resistance value of said offset region by using the method according to claim 1 ; and
extracting a model parameter of an IGFET by transferring the resistance value of said offset region calculated by said characteristic evaluating method to parasitic resistance of a diffusion region in a simulation model in said IGFET.
16. A method of extracting a model parameter for a circuit simulation for a semiconductor memory element, said semiconductor memory element having
a gate electrode formed over a semiconductor layer via a gate insulating film;
a channel region disposed just below said gate electrode via said gate insulating film;
two diffusion regions formed on both sides of said channel region;
a memory function element having a charge retaining function, formed on one side or both sides of said gate electrode; and
an offset region positioned below said memory function element and isolating said channel region and said diffusion regions from each other,
said diffusion region formed on the side where said memory function element exists and said channel region being isolated from each other by said offset region, and a resistance value of said offset region changing according to an amount of charges or a polarization state of charges accumulated in said memory function element, wherein
said method comprises steps of
calculating the resistance value of said offset region by using the method according to claim 1 ; and
extracting a model parameter of an IGFET by transferring the resistance value of said offset region calculated by said characteristic evaluating method as external parasitic resistance to be connected to said diffusion region of said IGFET.
17. An apparatus for extracting a model parameter for a circuit simulation for a semiconductor memory element, said semiconductor memory element having
a gate electrode formed over a semiconductor layer via a gate insulating film;
a channel region disposed just below said gate electrode via said gate insulating film;
two diffusion regions formed on both sides of said channel region;
a memory function element having a charge retaining function, formed on one side or both sides of said gate electrode; and
an offset region positioned below said memory function element and isolating said channel region and said diffusion regions from each other,
said diffusion region formed on the side where said memory function element exists and said channel region being isolated from each other by said offset region, and a resistance value of said offset region changing according to an amount of charges or a polarization state of charges accumulated in said memory function element, wherein
said apparatus has a function of determining fitting parameters so that the resistance value of said offset region modeled by the following model formula coincides with a resistance value of said offset region calculated by the method according to claim 9 :
Rchos=A ×exp { B ×( Vgs+C×Vbs )}+ D
where a potential on the low potential side of said two diffusion regions is used as a reference potential, the resistance value of said offset region is set as Rchos, the potential of said gate electrode is set as Vgs, the potential of said semiconductor layer is set as Vbs, and A, B, C, and D are set as fitting parameters.
18. The apparatus according to claim 17 , further comprising:
a function of calculating the resistance value of said offset region by using the method according to claim 9 .
19. An apparatus for extracting a model parameter for a circuit simulation for a semiconductor memory element, said semiconductor memory element having
a gate electrode formed over a semiconductor layer via a gate insulating film;
a channel region disposed just below said gate electrode via said gate insulating film;
two diffusion regions formed on both sides of said channel region;
a memory function element having a charge retaining function, formed on one side or both sides of said gate electrode; and
an offset region positioned below said memory function element and isolating said channel region and said diffusion regions from each other,
said diffusion region formed on the side where said memory function element exists and said channel region being isolated from each other by said offset region, and a resistance value of said offset region changing according to an amount of charges or a polarization state of charges accumulated in said memory function element, wherein
said apparatus has a function of determining fitting parameters so that a resistance value of said offset region modeled by the following model formula with a resistance value of said offset region calculated by the method according to claim 10 :
Rchos=Rchos0×{1+ E ×( Vds−Vds 0)}
where the resistance value of said offset region is set as Rchos, the potential difference between said two diffusion regions is set as Vds, a sufficiently low potential difference between said two diffusion regions when said IGFET is in a linear region is set as Vds 0 , Rchos at the time Vds=Vds 0 is set as Rchos 0 , and E is set as a fitting parameter.
20. The apparatus according to claim 19 , further comprising:
a function of calculating the resistance value of said offset region by using the method according to claim 10 .
21. An apparatus for extracting a model parameter for a circuit simulation for a semiconductor memory element, said semiconductor memory element having
a gate electrode formed over a semiconductor layer via a gate insulating film;
a channel region disposed just below said gate electrode via said gate insulating film;
two diffusion regions formed on both sides of said channel region;
a memory function element having a charge retaining function, formed on one side or both sides of said gate electrode; and
an offset region positioned below said memory function element and isolating said channel region and said diffusion regions from each other,
said diffusion region formed on the side where said memory function element exists and said channel region being isolated from each other by said offset region, and a resistance value of said offset region changing according to an amount of charges or a polarization state of charges accumulated in said memory function element, wherein
said apparatus has a function of determining a fitting parameter so that a resistance value of said offset region modeled by the following model formula coincides with a resistance value of said offset region calculated by the method according to claim 11 :
Rchos=Rchos 0×{1+ E ×( Vds−Vds 0)}
where the resistance value of said offset region is set as Rchos, the potential difference between said two diffusion regions is set as Vds, a sufficiently low potential difference between said two diffusion regions when said IGFET is in a linear region is set as Vds 0 , Rchos at the time Vds=Vds 0 is set as Rchos 0 , and E is set as a fitting parameter.
22. The apparatus according to claim 21 , further comprising:
a function of calculating the resistance value of said offset region by using the method according to claim 11 .