Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor
View Patent ↗A semiconductor substrate is provided having an insulator thereon with a semiconductor layer on the insulator. A deep trench isolation is formed, introducing strain to the semiconductor layer. A gate dielectric and a gate are formed on the semiconductor layer. A spacer is formed around the gate, and the semiconductor layer and the insulator are removed outside the spacer. Recessed source/drain are formed outside the spacer.
1. A method for manufacturing a semiconductor device comprising:
providing a semiconductor substrate having an insulator thereon with a semiconductor layer on the insulator;
forming a deep trench isolation, introducing strain to the semiconductor layer;
forming a gate dielectric and a gate on the semiconductor layer;
forming a spacer around the gate;
removing the semiconductor layer and the insulator outside the spacer;
forming recessed source/drain outside the spacer;
removing the spacer;
removing the deep trench isolation, leaving a trench; and
depositing a layer in the trench, over the recessed source/drain, and over the gate, introducing strain to the semiconductor layer.
2. The method of claim 1 wherein forming recessed source/drain outside the spacer further comprises forming recessed source/drain by selective epitaxial growth outside the spacer.
3. The method of claim 1 wherein forming recessed source/drain outside the spacer further comprises forming recessed carbon doped silicon source/drain outside the spacer, introducing strain to the semiconductor layer.
4. The method of claim 1 wherein forming recessed source/drain outside the spacer further comprises forming recessed silicon germanium source/drain outside the spacer, introducing strain to the semiconductor layer.
5. A method for manufacturing a semiconductor device comprising:
providing a silicon substrate having a buried oxide layer insulator thereon and a silicon layer on the insulator;
forming a deep trench isolation, introducing strain to the silicon layer;
forming a gate dielectric and a gate on the silicon layer;
forming a liner around the gate and on the silicon layer;
forming a spacer on the liner around the gate;
removing the silicon layer, and the insulator to expose the surface of the silicon substrate outside the spacer;
forming recessed source/drain through selective epitaxial growth outside the spacer;
removing the spacer;
removing the deep trench isolation, leaving a trench; and
depositing a contact etch stop layer in the trench and over the recessed source/drain, the liner, and the gate, introducing strain to the silicon layer.
6. The method of claim 5 wherein forming recessed source/drain through selective epitaxial growth outside the spacer further comprises forming recessed source/drain through selective epitaxial growth on the surface of the silicon substrate outside the spacer.
7. The method of claim 5 wherein forming recessed source/drain through selective epitaxial growth outside the spacer further comprises forming recessed carbon doped silicon source/drain through selective epitaxial growth outside the spacer, introducing strain to the silicon layer.
8. The method of claim 5 wherein forming recessed source/drain through selective epitaxial growth outside the spacer further comprises forming recessed silicon germanium source/drain through selective epitaxial growth outside the spacer, introducing strain to the silicon layer.