Gratings, related optical devices and systems, and methods of making such gratings
Gratings and related devices and systems are disclosed.
1 . An article, comprising:
a first layer comprising a first material and having a surface with a cross-sectional profile comprising a plurality of portions and at least one peak and at least one trough; and
a second layer adjacent the first layer, the second layer comprising a second material and having a surface with a cross-sectional profile comprising a plurality of portions corresponding to the portions of the cross-sectional profile of the surface of the first layer and at least one peak and at least one trough,
wherein the corresponding portions have an angular orientation within about 10% or less of each other and a length within about 10% or less of each other, the first and second materials are different and the article is birefringent for a wavelength, λ, where λ is in a range from about 150 nm to about 2,000 nm.
2 . The article of claim 1 , further comprising a third layer adjacent the second layer, the third layer comprising a third material, wherein the second and third materials are different and the third layer has surface having a cross-sectional profile comprising a plurality of portions corresponding to the portions of the cross-sectional profile of the surface of the first layer.
3 . The article of claim 2 , wherein the first and third materials are the same.
4 . The article of claim 2 , further comprising a fourth layer adjacent the third layer, the fourth layer comprising a fourth material, wherein the third and fourth materials are different and the fourth layer has surface having a cross-sectional profile comprising a plurality of portions corresponding to the portions of the cross-sectional profile of the surface of the first layer.
5 . The article of claim 4 , wherein the second and fourth materials are the same.
6 . The article of claim 1 , wherein a perpendicular thickness of the second layer is substantially constant.
7 . The article of claim 1 , wherein the first layer extends in a plane and the portions of the cross-sectional profile of the surface of the first layer comprises a plurality of facets that are non-normal and non-parallel to the plane.
8 . The article of claim 1 , wherein the surface of the first layer has a periodic cross-sectional profile.
9 . The article of claim 8 , wherein the cross-sectional profile of the surface of the first layer has a period of about 2,000 nm or less.
10 . The article of claim 8 , wherein the cross-sectional profile of the surface of the first layer has a period of about 1,000 nm or less.
11 . The article of claim 8 , wherein the cross-sectional profile of the surface of the first layer has a period of about 500 nm or less.
12 . The article of claim 8 , wherein the cross-sectional profile of the surface of the first layer has a period of about 200 nm or less.
13 . The article of claim 8 , wherein a period of the cross-sectional profile of the surface of the first layer is triangular.
14 . The article of claim 8 , wherein a period of the cross-sectional profile of the surface of the first layer is trapezoidal.
15 . The article claim 1 , wherein the surface of the first layer has a saw-tooth cross-sectional profile.
16 . The article of claim 1 , wherein the article has a phase birefringence of about π/4 or more at λ.
17 . The article of claim 1 , wherein the article has a phase birefringence of about π/2 or more at λ.
18 . The article of claim 1 , wherein the article has a phase birefringence of about π or more at λ.
19 . The article of claim 1 , wherein the article has a phase birefringence of about 2π or more at λ.
20 . The article of claim 1 , wherein the article has a phase birefringence of about 4π or more at λ.
21 . The article of claim 1 , wherein the first material is a semiconductor material.
22 . The article of claim 1 , wherein the first material is a dielectric material.
23 . The article of claim 1 , wherein the first material comprises a material selected from the group consisting of SiN x :H z , SiO x N y :H z , Al 2 O 3 , Ta 2 O 5 , Nb 2 O 5 , TaNb x O y , TiNb x O y , HfO 2 , TiO 2 , SiO 2 , ZnO, LiNbO 3 , a-Si, Si, ZnSe, and ZnS.
24 . The article of claim 1 wherein the second material is a semiconductor material.
25 . The article of claim 1 , wherein the second material is a dielectric material.
26 . The article of claim 1 , wherein the second material comprises a material selected from the group consisting of SiN x :H z , SiO x N y :H z , Al 2 O 3 , Ta 2 O 5 , Nb 2 O 5 , TaNb x O y , TiNb x O y , HfO 2 , TiO 2 , SiO 2 , ZnO, LiNbO 3 , a-Si, Si, ZnSe, and ZnS.
27 . An article, comprising
a first layer comprising a first material and having a surface with a periodic cross-sectional profile comprising a plurality of portions; and
a second layer adjacent the first layer, the second layer comprising a second material and having a surface with a cross-sectional profile comprising a plurality of portions corresponding to the portions of the cross-sectional profile of the surface of the first layer,
wherein corresponding portions have an angular orientation within about 10% or less of each other and a length within about 10% or less of each other, the first and second materials are different and a period of the cross-sectional profile of the surface of the first layer is about 2,000 nm or less.
28 . An article, comprising:
a first layer comprising a first material extending in a plane and comprising a surface having a plurality of facets that are non-normal and non-parallel to the plane, the surface of the first layer having a cross-sectional profile comprising at least one peak and at least one trough; and
a second layer adjacent the first layer, the second layer comprising a second material adjacent and having a perpendicular thickness that is substantially constant,
wherein the first and second materials are different and the article is birefringent for a wavelength, λ, where λ is in a range from about 150 nm to about 2,000 nm.
29 . An article, comprising:
a first layer comprising a first material extending in a plane and comprising a surface having a plurality of facets that are non-normal and non-parallel to the plane and having a periodic cross-sectional profile; and
a second layer adjacent the first layer, the second layer comprising a second material and having a perpendicular thickness that is substantially constant,
wherein a period of the cross-sectional profile of the surface of the first layer is about 2,000 nm or less.
30 . An article, comprising:
a plurality of layers each having a surface with saw-tooth cross-sectional profile,
wherein the article is birefringent for radiation having a wavelength, λ, from about 150 nm to about 2,000 nm.
31 . A method, comprising:
forming a layer of a second material by sequentially depositing a plurality of monolayers of the second material, one of the monolayers of the second material being deposited on a surface of a layer of a first material having a cross-sectional profile comprising a plurality of portions and at least one peak and at least one trough,
wherein the layer of the second material comprises a surface with a cross-sectional profile comprising a plurality of portions corresponding to the portions of the cross-sectional profile of the surface of the layer of the first material and at least one peak and at least one trough, the corresponding portions have an angular orientation within about 10% or less of each other and a length within about 10% or less of each other, the first and second materials are different, and the article is birefringent for a wavelength, λ, where λ is in a range from about 150 nm to about 2,000 nm.
32 . The method of claim 31 , further comprising forming a layer of a third material by sequentially depositing a plurality of monolayers of the third material, one of the monolayers of the third material being deposited on the surface of the second layer.
33 . The method of claim 32 , wherein the layer of the third material comprises a surface having cross-sectional profile comprising a plurality of portions corresponding to the portions of the cross-sectional profile of the surface of the layer of the first material.
34 . The method of claim 32 , further comprising forming a layer of a fourth material by sequentially depositing a plurality of monolayers of the fourth material, one of the monolayers of the fourth material being deposited on a surface of the layer of the third material.
35 . The method of claim 34 , wherein the layer of the fourth material comprises a surface having cross-sectional profile comprising a plurality of portions corresponding to the portions of the cross-sectional profile of the surface of the layer of the first material.
36 . The method of claim 31 , wherein the monolayers are formed using atomic layer deposition.
37 . The method of claim 31 , further comprising forming the layer of the first material by etching an intermediate layer of the first material.
38 . The method of claim 31 , wherein the surface of the layer of the first material has a periodic cross-sectional profile.
39 . The method of claim 31 , wherein the surface of the layer of the first material has a saw-tooth cross-sectional profile.
40 . A method, comprising:
forming a layer of a second material by sequentially depositing a plurality of monolayers of the second material, one of the monolayers of the second material being deposited on a surface of a layer of a first material having a periodic cross-sectional profile comprising a plurality of portions and having a period of about 2,000 nm or less,
wherein the first and second materials are different and the second layer has a surface comprising a plurality of portions each corresponding to a portion of the cross-sectional profile of the surface of the layer of the first material.