Semiconductor device with superimposed poly-silicon plugs
View Patent ↗A semiconductor device includes a first insulating layer; a first poly-silicon plug formed in the first insulating layer; a second insulating layer, formed on the first insulating layer; and a second poly-silicon plug that is formed in the second insulating layer. At least one of the first and second insulating layers is made from non-doped silicate glass. The first and second poly-silicon plugs are electrically coupled to each other in a thickness direction. Preferably, both the first and second insulating layers are made from non-doped silicate glass.
1. A semiconductor device, comprising:
a first insulating layer;
a first polysilicon plug formed in the first insulating layer;
a second insulating layer, formed on the first insulating layer; and
a second poly-silicon plug that is formed entirely in the second insulating layer, wherein
at least one of the first and second insulating layers is made from non-doped silicate glass,
the first and second poly-silicon plugs are electrically coupled to each other in a thickness direction,
both the first and second insulating layers are made from non-doped silicate glass, and
the first and second poly-silicon plugs are formed only in the first and second insulating layers, to thereby prevent impurities from being diffused to the first and second poly-silicon plugs.
2. A semiconductor device according to claim 1 , wherein the first poly-silicon plug has a side surface which is partially exposed from the first insulating layer into the second insulating layer.
3. A semiconductor device according to claim 1 , wherein the second poly-silicon plug has a cross section area, which is larger than the first poly-silicon plug.
4. A semiconductor device according to claim 1 , further comprising:
a semiconductor substrate;
an impurity-diffused layer, formed on the semiconductor substrate; and
a conductive pattern formed on the second insulating layer; wherein
the first insulating layer is formed on the impurity diffused layer; and
the impurity-diffused layer and the conductive pattern are electrically coupled to each other in a thickness direction through the first and second poly-silicon plugs.
5. A semiconductor device, comprising:
a semiconductor substrate;
an impurity-diffused layer, formed on the semiconductor substrate;
a first insulating layer, formed on the impurity-diffused layer;
a first poly-silicon plug formed in the first insulating layer;
a second insulating layer, formed on the first insulating layer;
a second poly-silicon plug, formed entirely in the second insulating layer; and
a conductive pattern formed on the second insulating layer, wherein
the first and second insulating layers are made from non-doped silicate glass,
the impurity-diffused layer and the conductive pattern are electrically coupled to each other in a thickness direction through the first and second poly-silicon plugs, and
the first and second poly-silicon plugs are formed only in the first and second insulating layers, to thereby prevent impurities from being diffused to the first and second poly-silicon plugs.
6. A semiconductor device according to claim 5 , wherein the first poly-silicon plug has a side surface which is partially exposed from the first insulating layer into the second insulating layer.
7. A semiconductor device according to claim 5 , wherein the second poly-silicon plug has a cross section area, which is larger than the first poly-silicon plug.
8. A semiconductor device, comprising:
a semiconductor substrate;
an impurity-diffused layer, formed on the semiconductor substrate;
a first insulating layer, formed on the impurity diffused layer;
a first poly-silicon plug formed in the first insulating layer;
a second insulating layer, formed on the first insulating layer;
a second poly-silicon plug, formed entirely in the second insulating layer; and
a conductive pattern formed on the second insulating layer, wherein
the first insulating layer is made from non-doped silicate glass, and the second insulating layer is made from impurity-doped silicate glass,
the impurity-diffused layer and the conductive pattern are electrically coupled to each other in a thickness direction through the first and second poly-silicon plugs, and
the first and second poly-silicon plugs are formed only in the first and second insulating layers, to thereby prevent impurities from being diffused to the first and second poly-silicon plugs.
9. A semiconductor device according to claim 8 , wherein the second poly-silicon plug has a cross section area, which is larger than the first poly-silicon plug.