Semiconductor laser device and illumination apparatus
View Patent ↗A semiconductor laser device is provided, which comprises a semiconductor laser element having a light emission surface, a reflective member having a reflective surface, and a light diffusing member provided between the light emission surface and the reflective surface. The light emission surface and the reflective surface face each other so that an external resonance cavity is provided therebetween. Scattered light is emitted from the light diffusing member.
1. A semiconductor laser device, comprising:
a semiconductor laser element having a light emission surface;
a reflective member having a reflective surface; and
a light diffusing member provided between the light emission surface and the reflective surface,
wherein the light emission surface and the reflective surface face each other so that an external resonance cavity is provided therebetween, and wherein the external resonance cavity is in direct contact with each of the light emission surface and the reflective surface, and
scattered light is emitted from the light diffusing member.
2. A semiconductor laser device according to claim 1 , wherein
the light emission surface is interposed between the semiconductor laser element and the light diffusing member, and
the light diffusing member contains a light scattering material.
3. A semiconductor laser device according to claim 1 , wherein the light diffusing member contains at least one of a light scattering material, a fluorescent materials, and a wavelength conversion material.
4. A semiconductor laser device according to claim 3 , wherein the fluorescent material is capable of absorbing light from the semiconductor laser element and emitting light having a wavelength different from the wavelength of the light from the semiconductor laser element.
5. A semiconductor laser device according to claim 3 , wherein the fluorescent material contains a plurality of substances capable of emitting light having different wavelengths.
6. A semiconductor laser device according to claim 3 , wherein the wavelength conversion material is capable of absorbing light from the semiconductor laser element and converting the light from the semiconductor laser element to light having a wavelength which is 1/N of the wavelength of the light from the semiconductor laser element, wherein N is a natural number.
7. A semiconductor laser device according to claim 3 , wherein the wavelength conversion material is a second harmonic generation element.
8. A semiconductor laser device according to claim 3 , wherein an oscillation wavelength of the semiconductor laser element is in a blue region, a light emission color of the fluorescent material is yellow, and light obtained by diffusing light from the semiconductor laser element using the light diffusing member is mixed with light emitted from the fluorescent material to obtain white light.
9. A semiconductor laser device according to claim 3 , wherein an oscillation wavelength of the semiconductor laser element is in a red region and the light diffusing member comprises the wavelength conversion material, a wavelength of laser light emitted from the wavelength conversion material is in an ultraviolet region, and light obtained by diffusing light from the semiconductor laser element using the light diffusing member is mixed with light emitted from the wavelength conversion material.
10. A semiconductor laser device according to claim 3 , wherein an oscillation wavelength of the semiconductor laser element is in an infrared region, a wavelength of laser light emitted from the wavelength conversion material is in a blue region, and light obtained by diffusing light emitted from the wavelength conversion material using the light diffusing member is mixed with light emitted from the fluorescent material.
11. A semiconductor laser device according to claim 1 , wherein
the semiconductor laser element further a plurality of light emission surfaces,
a plurality of reflective members, a reflective surface of each reflective member being disposed facing a corresponding light emission surface of the semiconductor laser element, and
each of a plurality of external resonance cavities is provided between and in direct contact with each of the plurality of light emission surfaces of the semiconductor laser element and the reflective surface of each of the plurality of reflective members.
12. A semiconductor laser device, comprising:
a semiconductor laser element having a light emission surface;
a reflective member having a reflective surface;
a light diffusing member provided between the light emission surface and the reflective surface,
wherein the light emission surface and the reflective surface face each other so that an external resonance cavity is provided therebetween,
scattered light is emitted from the light diffusing member,
wherein the semiconductor laser element further has at least one light emission surface,
at least one reflective member is further provided, a reflective surface of each reflective member being disposed facing a corresponding light emission surface of the semiconductor laser element,
a plurality of external resonance cavities are provided between the light emission surfaces of the semiconductor laser elements and the reflective surfaces of the reflective members;
wherein
the semiconductor laser element is in the shape of a hexagon when viewed from the top,
the light emission surfaces are disposed on six outer circumferential sides of the hexagon,
the reflective members each having the reflective surface provided thereon, the reflective surface facing the corresponding light emission surface, and
the external resonance cavities are provided between the light emission surfaces and the reflective surfaces.
13. A semiconductor laser device according to claim 12 , wherein
the six external resonance cavities are paired with each pair of external resonance cavities facing each other, and
the light diffusing members corresponding to the three pairs of external resonance cavities emit three primary colors, i.e., red blue and green, respectively.
14. A semiconductor laser device, comprising:
a semiconductor laser element having a light emission surface;
a reflective member having a reflective surface;
a light diffusing member provided between the light emission surface and the reflective surface,
wherein the light emission surface and the reflective surface face each other so that an external resonance cavity is provided therebetween,
scattered light is emitted from the light diffusing member,
a second semiconductor laser element disposed opposite to the light diffusing member with respect to the reflective member, wherein
the reflective member also serves as a light emission surface for the second semiconductor laser element, and
the light emission surface of the first semiconductor laser element also functions as a reflective surface.
15. A semiconductor laser device according to claim 1 , wherein
the light diffusing member is made of a resin containing a light scattering material, and
the resin seals the semiconductor laser element and the reflective member.
16. A semiconductor laser device according to claim 1 , wherein the light diffusing member has a light emission surface in the shape of a lens.
17. A semiconductor laser device, comprising:
a semiconductor laser element having a light emission surface;
a reflective member having a reflective surface;
a light diffusing member provided between the light emission surface and the reflective surface,
wherein the light emission surface and the reflective surface face each other so that an external resonance cavity is provided therebetween,
scattered light is emitted from the light diffusing member, and
an external reflective member for reflecting light emitted from the light diffusing member in a predetermined direction.
18. A semiconductor laser device according to claim 17 , wherein the external reflective member is a reflective condensing member for reflecting and condensing the light emitted from the light diffusing member.
19. A semiconductor laser device according to claim 1 , further comprising a drive circuit for driving the semiconductor laser element.
20. A semiconductor laser device according to claim 19 , wherein a power source voltage for the drive circuit is any one of DC 12 V, DC 24 V and AC 100 V.
21. A semiconductor laser device according to claim 19 , wherein a power source terminal of the drive circuit is in the shape of a base.
22. A semiconductor laser device according to claim 1 , wherein the light diffusing member is made of a resin containing a light scattering material and the light diffusing member is formed by applying the resin on the light emission surface of the semiconductor laser element.
23. A semiconductor laser device according to claim 1 , wherein the light diffusing member is made of a resin containing a light scattering material and the light diffusing member is formed by applying the resin onto the reflective surface of the reflective member.
24. A semiconductor laser device according to claim 19 , further comprising a light reception element for receiving light emitted from the light diffusing member, wherein
information about the light received by the light reception element is fed back to the drive circuit so that an intensity of the light emitted from the light diffusing member is controlled.
25. An apparatus for illumination, comprising a semiconductor laser device according to claim 1 , wherein illumination is performed using light emitted from the semiconductor laser device.