Method of forming coated article using sputtering target(s) and ion source(s) and corresponding apparatus
View Patent ↗A coated article is provided that may be used as a vehicle windshield, insulating glass (IG) window unit, or the like. An ion beam is used to treat an infrared (IR) reflecting layer(s) of such a coated article. Advantageously, this has been found to improve sheet resistance (R s ) properties, emittance, solar control properties, and/or durability of the coated article. In certain example embodiments, an ion source(s) and a sputtering target(s) used in forming the IR reflecting layer, or any other suitable layer, may be located in a common deposition chamber of an apparatus used in forming at least part of the coating.
1. A method of making a coated article, the method comprising:
providing a glass substrate;
forming at least one dielectric layer on the substrate;
providing at least one ion source and at least one sputtering target in a first deposition chamber;
forming an infrared (IR) reflecting layer on the substrate over at least the first dielectric layer, where said forming of the IR reflecting layer comprises depositing a layer comprising silver by way of sputtering without using an ion beam, and thereafter ion beam treating said layer comprising silver with an ion beam comprising argon and/or krypton; and
forming at least one additional dielectric layer on the substrate over at least the IR reflecting layer.
2. The method of claim 1 , wherein the sputtering target and the ion source in the first chamber are both located in an atmosphere of the first chamber which is at a first pressure, wherein the first pressure is a pressure less than atmospheric.
3. The method of claim 2 , further comprising forming the dielectric layer located between the substrate and the IR reflecting layer using at least a sputtering target located in a second deposition chamber different than the first chamber, and wherein the first pressure in the first chamber can be different than a second pressure in the second chamber.
4. The method of claim 1 , wherein a common lid of at least the first chamber supports both the ion source and the sputtering target that are located in the first chamber.
5. The method of claim 1 , wherein the IR reflecting layer consists essentially of silver.
6. The method of claim 1 , wherein the sputtering target and the ion source in the first chamber are both located in an atmosphere of the first chamber which is at a first pressure, wherein the first pressure is a pressure less than atmospheric pressure, and wherein the method further comprises forming a contact layer over and contacting the IR reflecting layer using at least a sputtering target located in a second deposition chamber different than the first chamber, and wherein the first pressure in the first chamber can be different than a second pressure in the second chamber.
7. The method of claim 6 , wherein the contact layer comprises an oxide of Ni and/or Cr.
8. The method of claim 1 , wherein said at least one dielectric layer comprises zinc oxide.
9. The method of claim 1 , wherein said additional dielectric layer comprises tin oxide and/or silicon nitride.
10. The method of claim 1 , wherein the ion beam consists essentially of ions from an inert gas used in the ion sources.
11. The method of claim 1 , wherein the ion beam is substantially free of oxygen ions.
12. The method of claim 1 , wherein the ion beam is utilized in a manner so as to cause the IR reflecting layer to have compressive stress.
13. The method of claim 1 , further comprising forming at least a layer comprising Ni and/or Cr on the substrate over at least the IR reflecting layer.
14. The method of claim 1 , wherein the ion beam is utilized in a manner sufficient to cause a sheet resistance (R s ) and/or emissivity of the IR reflecting layer to be less than if the ion beam had not been used.
15. The method of claim 1 , wherein the ion beam is utilized in a manner sufficient to cause a sheet resistance (R s ) and/or emissivity of the IR reflecting layer to be at least 5% less than if the ion beam had not been used.
16. The method of claim 1 , further comprising heat treating the coated article in a manner sufficient for at least one of tempering and heat bending, so that following said heat treating the coated article has a visible transmission of at least 70% and a sheet resistance (R s ) of no greater than 5.0 ohms/square.
17. The method of claim 1 , further comprising heat treating the coated article in a manner sufficient for at least one of tempering and heat bending, so that following said heat treating the coated article has a visible transmission of at least 75% and a sheet resistance (R s ) of no greater than 3.0 ohms/square.
18. The method of claim 1 , wherein prior to any optional heat treating, the coated article in monolithic form has a visible transmission of at least 70% and a sheet resistance (R s ) of no greater than 5.0 ohms/square.
19. The method of claim 1 , further comprising forming a layer comprising zinc oxide on the glass substrate in a position so that the IR reflecting layer is formed directly on and contacting the layer comprising zinc oxide, and wherein the IR reflecting layer comprises silver.
20. The method of claim 1 , further comprising forming another IR reflecting layer, said another IR reflecting layer comprising silver.
21. The method of claim 1 , wherein the ion source is mounted so as to be adjustable, so that a direction of the ion beam is adjustable across a range of angles θ by adjusting a mounting position of the ion source.
22. A method of making a coated article, the method comprising:
providing at least one ion source and at least one sputtering target in a first deposition chamber;
forming an IR reflecting layer, where said forming of the IR reflecting layer comprises depositing a layer comprising silver by way of sputtering without using an ion beam, and thereafter ion beam treating said layer comprising silver with an ion beam using at least one inert gas and/or inert gas ion; and
forming at least one additional layer over at least the IR reflecting layer.
23. The method of claim 22 , wherein the sputtering target and the ion source in the first chamber are both located in an atmosphere of the first chamber which is at a first pressure, wherein the first pressure is a pressure less than atmospheric pressure.
24. The method of claim 23 , wherein the method further comprises forming a dielectric layer located between a substrate and the IR reflecting layer using at least a sputtering target located in a second deposition chamber different than the first chamber, and wherein the first pressure in the first chamber is different than a second pressure in the second chamber.
25. The method of claim 22 , wherein a common lid of at least the first chamber supports both the ion source and the sputtering target that are located in the first chamber.
26. The method of claim 1 , wherein the ion source is mounted in the chamber so that an ion beam from the ion source forms an angle θ relative to the vertical of from about 5 to 30 degrees.
27. The method of claim 22 , wherein the ion source is mounted in the chamber so that an ion beam from the ion source forms an angle θ relative to the vertical of from about 5 to 30 degrees.