Thin film transistor, method of fabricating the same, and flat panel display using thin film transistor
View Patent ↗A thin film transistor may include an active layer formed on an insulating substrate and formed with source/drain regions and a channel region; a gate insulating film formed on the active layer; and a gate electrode formed on the gate insulating film. The gate electrode may be formed of a conductive metal film pattern and a conductive oxide film covering the conductive metal film pattern. The source/drain regions may include an LDD region, and the LDD region may at least partially overlap with the gate electrode.
1. A thin film transistor, comprising:
an active layer formed on an insulating substrate and having source/drain regions and a channel region;
a gate insulating film formed on the active layer; and
a gate electrode formed on the gate insulating film, and comprising a conductive film pattern and a conductive oxide film covering an upper surface of the conductive film pattern,
wherein the source/drain regions comprise a lightly doped drain (LDD) region, and the LDD region overlaps with the gate electrode,
wherein the conductive film pattern comprises at least one of a group of Zn, In, and any alloy thereof.
2. The thin film transistor of claim 1 , wherein the conductive oxide film is formed by oxidizing the conductive film pattern.
3. The thin film transistor of claim 1 , wherein the conductive oxide film is about 2 μm or less thick.
4. The thin film transistor of claim 1 , wherein the conductive oxide film is about 1 μm or less thick.
5. The thin film transistor of claim 1 , wherein the LDD region extends horizontally beneath a portion of the conductive oxide film formed at a side of the conductive film pattern.
6. The thin film transistor of claim 1 , wherein the LDD region is narrower than the thickness of the conductive oxide film.
7. The thin film transistor of claim 1 , wherein the LDD region is about 2 μm or less wide.
8. The thin film transistor of claim 1 , wherein the LDD region is about 1 μm or less wide.
9. An active matrix flat panel display comprising a plurality of thin film transistors of claim 1 arranged to control the operation of a matrix of pixels.
10. The active matrix flat panel display of claim 9 , wherein the flat panel display is a liquid crystal display or an organic electroluminescent display.
11. The thin film transistor of claim 1 , wherein the conductive oxide film covers the upper surface of the conductive film pattern and a side surface of the conductive film pattern.