Flat panel display and method of fabricating the same
View Patent ↗Disclosed is a flat panel display which comprises a substrate; a gate line formed on the substrate along a predetermined direction; and a gate electrode electrically connected to the gate line, and having a sheet resistance different from the gate line. With this configuration, a wiring resistance of the gate line can be lowered with minimizing the change of the process and without increasing the thickness of the gate line.
1. A flat panel display, comprising:
a gate line formed on a substrate along a predetermined direction; and
a gate electrode electrically connected to the gate line, and having a sheet resistance different from the gate line, wherein the gate line's sheet resistance is between about 85% and about 91% of the gate electrode's sheet resistance.
2. The flat panel display of claim 1 , wherein the gate line is ion-doped.
3. The flat panel display of claim 1 , wherein the gate line and the gate electrode are formed of at least any one material selected from a group of aluminum (Al), aluminum alloy, molybdenum (Mo), and molybdenum alloy.
4. The flat panel display of claim 3 , wherein the gate line and the gate electrode comprise molybdenum-tungsten alloy.
5. A flat panel display, comprising:
a gate line formed on a substrate along a predetermined direction; and
a gate electrode electrically connected to the gate line,
wherein the gate line and the gate electrode are each between about 150 nm and about 400 nm thick and wherein the gate line's sheet resistance is between about 85% and about 91% of the gate electrode's sheet resistance.
6. A flat panel display, comprising:
a gate line formed on a substrate along a predetermined direction; and
a gate electrode electrically connected to the gate line,
wherein the gate line is ion-doped and wherein the gate line's sheet resistance is between about 85% and about 91% of the gate electrode's sheet resistance.
7. A flat panel display, comprising:
a gate line formed on a substrate along a predetermined direction; and
a gate electrode electrically connected to the gate line,
wherein the gate line and the gate electrode have the same thickness and the gate line has a lower sheet resistance than the gate electrode.
8. The flat panel display of claim 7 , wherein the gate line's sheet resistance is between about 85% and about 91% of the gate electrode's sheet resistance.
9. The flat panel display of claim 7 , wherein the gate line is ion-doped.
10. The flat panel display of claim 7 , wherein the gate line and the gate electrode are formed of at least any one material selected from a group of aluminum (Al), aluminum alloy, molybdenum (Mo), and molybdenum alloy.
11. The flat panel display of claim 10 , wherein the gate line and the gate electrode comprise molybdenum-tungsten alloy.
12. The flat panel display of claim 7 , wherein the gate line and the gate electrode are each between about 150 nm and about 400 nm thick.