Semiconductor laser with integrated heating element and method of manufacturing same
View Patent ↗A semiconductor laser structure has a laser active region and side trenches extending along the laser active region. At least one heatable stripe, in at least one of the side trenches, is connected to an electric power source. The amount of energy the source supplies to the stripe controls the laser active region temperature to control and offset effects of active region temperature on the emitted wavelength.
1. An arrangement including:
a semiconductor laser structure including a laser active region having at least one side trench extending along said laser active region, and
a heatable element arranged in said at least one side trench so as to be in heat transfer relation with the laser active region, the heatable element being adapted to be powered by an energy source for heating the heatable element and for causing the laser active region to be at a desired temperature.
2. The arrangement of claim 1 wherein the heatable element comprises a heatable stripe.
3. The arrangement of claim 2 , wherein laser active region extends between two side trenches, the heatable stripe being arranged in each of said side trenches.
4. The arrangement of claim 1 , wherein said heatable stripe is arranged at the bottom of said at least one side trench.
5. The arrangement of claim 4 , wherein said heatable stripe is a deposited strip in said at least one side trench.
6. The arrangement of claim 5 , further including a passivation layer extending over said heatable stripe, and contact holes through said passivation layer at opposed ends of said heatable stripe.
7. The arrangement of claim 1 , further including heater contact pads in electric contact with opposite ends of said heatable element.
8. The arrangement of claim 6 , wherein at least a portion of said heater contact pads extend into said contact holes, the portion of the heater contact pads extending into the holes being in electrical contact with said heatable stripe.
9. The arrangement of claim 8 , wherein said heatable stripe includes electrically heatable material.
10. The arrangement of claim 9 , wherein said heatable stripe is comprised of a material selected from the group consisting of metals and semiconductor substrate materials.
11. The arrangement of claim 10 , wherein said heatable stripe includes a material selected from the group consisting of essentially Ti/Pt, tungsten, aluminium, silver and gold.
12. The arrangement of claim 10 , wherein said heatable stripe includes a material selected from the group consisting of essentially silicon, gallium arsenide, gallium nitride, and cadmium telluride.
13. The arrangement of claim 9 , wherein said heatable stripe is essentially a Ti/Pt stripe.
14. The arrangement of claim 7 , wherein said heater contact pads are essentially TiAu contact pads.
15. A process of manufacturing an arrangement according to claim 14 , comprising the step of etching said at least one side trench by using an etch resist mask, and forming said at least one side trench by forming underetch regions under said resist mask.
16. The method of claim 15 , further including the step of defining said heatable element by a process selected from the group consisting of E-beam lift-off and an etch process.
17. The arrangement of claim 2 , wherein said heatable stripe is arranged at the bottom of said at least one side trench.
18. The arrangement of claim 2 , wherein said heatable stripe is a deposited strip in said at least one side trench.
19. The arrangement of claim 2 , further including a passivation layer extending over said heatable stripe, and contact holes being provided through said passivation layer at opposed ends of said heatable stripe.
20. The arrangement of claim 7 , wherein at least a portion of said heater contact pads extend into said contact holes, the portion of the heater contact pads extending into the holes being in electrical contact with said heatable stripe.
21. The arrangement of claim 2 , wherein said heatable stripe includes electrically heatable material.
22. The arrangement of claim 2 , wherein said heatable stripe is comprised of a material selected from the group consisting of metals and semiconductor substrate materials.
23. A process of manufacturing an arrangement according to claim 2 , comprising the step of etching said at least one side trench by using an etch resist mask, and forming said at least one side trench by forming underetch regions under said resist mask.
24. The method of claim 23 , further including the step of defining said heatable stripe by a process selected from the group consisting of E-beam lift-off and an etch process.
25. The arrangement of claim 1 in combination with an energy source for supplying sufficient energy to the heatable element to heat the laser active region to the desired temperature.
26. The arrangement of claim 25 wherein the heatable element comprises a stripe.