IP Library Granted Patent US 7,888,718
Granted Patent B2
US 7,888,718 · App. 10/996,057 · Granted Feb 15, 2011

Charge-dipole coupled information storage medium

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,888,718
App. No.
10/996,057
Granted
Feb 15, 2011
Kind
B2
Abstract

An information storage medium in which charges and electric dipoles are coupled with one another. The information storage medium includes a substrate, an electrode layer formed on the substrate, a ferroelectric layer formed on the electrode layer, and an insulating layer formed on the ferroelectric layer. Accordingly, it is possible to stably record information on the information storage medium.

Claims (32)

1. An information storage medium comprising:

a substrate;

an electrode layer formed on the substrate;

a ferroelectric layer formed on the electrode layer; and

an insulating layer in which charges aligning electric dipoles in the ferroelectric layer are trapped formed on the ferroelectric layer, wherein the insulating layer comprises a material that allows charges to be trapped by applying an electric potential selected from the group consisting of an oxide/nitride/oxide (ONO) structure and IrO.

2. The information storage medium as claimed in claim 1 , wherein the ferroelectric layer comprises a lead zirconate titanate (PZT).

3. The information storage medium as claimed in claim 1 , wherein the ferroelectric layer is formed to a thickness of about from 10 nm to 500nm.

4. The information storage medium as claimed in claim 1 , wherein the insulating layer is formed to a thickness of about from 5 nm to 300 nm.

5. A method of manufacturing an information storage medium comprising:

a substrate;

an electrode layer formed on the substrate;

a ferroelectric layer formed on the electrode layer; and

an insulating layer in which charges aligning electric dipoles in the ferroelectric layer are trapped formed on the ferroelectric layer, wherein the insulating layer comprises a material that allows charges to be trapped by applying an electric potential selected from the group consisting of an oxide/nitride/oxide (ONO) structure and IrO, said method comprising:

(a) forming an electrode layer on a substrate;

(b) forming a ferroelectric layer on the electrode layer; and

(c) forming an insulating layer on the ferroelectric layer.

6. The method as claimed in claim 5 , wherein step (b) comprises applying ferroelectric containing lead zirconate titanate (PZT) to the electrode layer.

7. An information storage apparatus comprising:

a substrate;

an electrode layer formed on the substrate;

a ferroelectric layer formed on the electrode layer;

an insulating layer in which charges aligning electric dipoles in the ferroelectric layer are trapped formed on the ferroelectric layer; and

a probe formed above the insulating layer, said probe causing the charges to become trapped in the insulating layer, wherein the insulating layer comprises a material that allows charges to be trapped by applying an electric potential selected from the group consisting of an oxide/nitride/oxide (ONO) structure and IrO.

8. A method of recording information in an information storage apparatus comprising:

a substrate;

an electrode layer formed on the substrate;

a ferroelectric layer formed on the electrode layer;

an insulating layer in which charges aligning electric dipoles in the ferroelectric layer are trapped formed on the ferroelectric layer, wherein the insulating layer comprises a material that allows charges to be trapped by applying an electric potential selected from the group consisting of an oxide/nitride/oxide (ONO) structure and IrO; and

a probe formed above the insulating layer, said probe causing the charges to become trapped in the insulating layer, said method comprising:

(a) applying an electric potential to the insulating layer using the probe;

(b) trapping charges in a portion of the insulating layer; and

(c) aligning electric dipoles in the ferroelectric layer.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE ERRONEOUSLY FILED NO. 7255478 FROM SCHEDULE PREVIOUSLY RECORDED AT REEL: 028153 FRAME: 0689. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Oct 5, 2016
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 040001/0920 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 3, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SEAGATE TECHNOLOGY INTERNATIONAL
Reel/Frame 028153/0689 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 3, 2005
From: JUNG, JU-HWAN; HONG, SEUNG-BUM; PARK, HONG-SIK
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 016331/0173 →