IP Library › Patent Application 10999607
Patent Application
App. No. 10/999,607

Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor

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Quick Facts
Patent No.
US None
App. No.
10/999,607
Abstract

The present invention is directed, in general, to a method of polishing a surface on substrates, such as semiconductor wafers and, more specifically, to a polishing pad suitable for this purpose. The polishing pad comprises a polishing body that includes a cross-linked polymer material, and may be incorporated into a polishing apparatus. Polishing includes positioning the substrate containing at least one layer against the polishing body and polishing the layer.

Claims (14)

1 - 27 . (canceled)

28 . A polishing apparatus comprising:

a mechanically driven carrier head;

a polishing platen, said carrier head being positionable against said polishing platen to impart a polishing force against said polishing platen; and

a polishing pad attached to said polishing platen and including a polishing body comprising a cross-linked polymer comprising a cross-linked polymer having a hardness ranging from about 34 Shore A to about 60 Shore A and.

29 . The polishing apparatus as recited in claim 1 , wherein said cross-linked polymer is a thermoplastic foam.

30 . The polishing apparatus as recited in claim 1 , wherein said cross-linked polymer has a closed cell structure.

31 . The polishing apparatus as recited in claim 1 , wherein said cross-linked polymer is polyethylene.

32 . The polishing apparatus as recited in claim 1 , wherein said cross-linked polymer is a polyethylene having a closed cell structure.

33 . The polishing apparatus as recited in claim 1 , wherein said polishing body includes a base pad and said cross-linked polymer forms a polishing surface located over said base pad.

34 . The polishing apparatus as recited in claim 1 , wherein said polishing body has a Copper removal rate of at least about 3,300 Angstroms per minute.

35 . The polishing apparatus as recited in claim 1 , wherein said polishing body has a Tantalum removal rate ranging from about 75 to 175 Angstroms per two minutes.

36 . The polishing apparatus as recited in claim 1 , wherein said polishing body has a selectivity of Cu to Ta removal rates of greater than about 27:1.

37 . The polishing apparatus as recited in claim 1 , wherein a range of depths of copper from a wafer surface removed by said polishing body is within about 1250 Angstroms.