IP Library Granted Patent US 7,348,724
Granted Patent B2
US 7,348,724 · App. 11/000,077 · Granted Mar 25, 2008

Organic electroluminescence device with short-prevention layer

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,348,724
App. No.
11/000,077
Granted
Mar 25, 2008
Kind
B2
Abstract

The present invention provides an organic EL device, by which an anode and cathode are prevented from being short-circuited in case of an emitting cell is blown out. The present invention includes an anode on a substrate, an organic layer on the anode, a cathode on the organic layer, and a short-prevention layer having a tensile stress on the cathode.

Claims (13)

1. An organic EL device comprising:

an anode on a substrate;

an organic layer on the anode;

a cathode on the organic layer; and

a short-prevention layer having a tensile stress on the cathode,

wherein the short-prevention layer is formed of either one selected from the group consisting of Cr, Mo, Ti, Co, Pt, or Pd or an alloy of at least two selected from the group, and wherein the short-prevention layer has a melting point higher than that of the cathode, wherein the short-prevention layer is formed of metal having a thermal conductivity sufficient to dissipate heat at a predetermined rate.

2. The organic EL device of claim 1 , wherein the short-prevention layer is formed of a material having a melting point higher than that of the cathode.

3. The organic EL device of claim 1 , wherein the short-prevention layer is formed by resistance heating.

4. The organic EL device of claim 1 , wherein the short-prevention layer is formed by E-beam processing.

5. The organic EL device of claim 1 , wherein the short-prevention layer is formed by sputtering.

6. The organic EL device of claim 5 , wherein the short-prevention layer is formed by the sputtering at a pressure of 0.5˜10 mTorr, a power density of 0.1˜8 W/cm 2 , and a substrate bias of (−)500˜0V.

7. The organic EL device of claim 1 , wherein the short-prevention layer is formed at a temperature within a range leaving the organic layer intact.

8. The organic EL device of claim 6 , wherein the temperature is equal to or lower than 80° C.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 9, 2008
From: LG ELECTRONICS INC.
To: LG DISPLAY CO., LTD.
Reel/Frame 021090/0886 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2004
From: LEE, HO NYUN
To: LG ELETRONICS INC.
Reel/Frame 016053/0410 →