Production method of sialon-based phosphor, and sialon-based phosphor
View Patent ↗To provide a sialon-based phosphor capable of forming a thin film by mixing it with a resin, and giving a uniform photoluminescent light with high light emission intensity, and to provide a method for producing a sialon-based phosphor not having excessively large agglomerated particles and a wide particle size distribution, there is provided a method for producing an α-sialon based phosphor represented by the formula: M x Ln y Si 12−(m+n) Al (m+n) O n N 16−n wherein M is at least one metal selected from Ca, Mg, Y and Li, Ln is at least one lanthanide metal selected from Eu, Dy, Er, Tb, Yb and Ce, ax+by=m (assuming that the valence of metal M is a and the valence of lanthanide metal Ln is b), 0<x≦1.5, 0.3≦m≦4.5, and 0<n<2.25), wherein the silicon nitride raw material used as the raw material is a silicon nitride raw material powder comprising amorphous silicon nitride and crystalline silicon nitride.
1. A method for producing a sialon-based phosphor, comprising
mixing a silicon nitride raw material powder with an AlN-containing substance acting as an aluminum source, an oxide of metal M (wherein M is at least one metal selected from Ca, Mg, Y and Li) or a precursor substance to an oxide of metal M upon thermal decomposition, and an oxide of lanthanide metal Ln or a precursor substance to an oxide of lanthanide metal Ln upon thermal decomposition, and
firing the mixture at 1,400 to 2,000° C. in an inert gas atmosphere containing nitrogen to produce an α-sialon based phosphor represented by the formula:
M x Ln y Si 12−(m+n) Al (m+n) O n N 16−n
wherein M is at least one metal selected from Ca, Mg, Y and Li, Ln is at least one lanthanide metal selected from Eu, Dy, Er, Tb, Yb and Ce, ax+by=m (assuming that the valence of metal M is a and the valence of lanthanide metal Ln is b), O<x≦1.5, 0.3≦m<4.5, and 0<n<2.25,
wherein said silicon nitride raw material powder comprises amorphous silicon nitride and crystalline silicon nitride.
2. The method for producing a sialon-based phosphor as claimed in claim 1 ,
wherein the ratio of the crystalline silicon nitride in said silicon nitride raw material powder is from 5 to 95 wt %.
3. The method for producing a sialon-based phosphor as claimed in claim 1 , wherein the specific surface area of said silicon nitride raw material is from 15 to 300 m 2 /g.
4. The method for producing a sialon-based phosphor as claimed in claim 1 , wherein said silicon nitride raw material is a silicon nitride powder obtained by heat-treating an amorphous silicon nitride powder.
5. The method for producing a sialon-based phosphor as claimed in claim 4 , wherein said amorphous silicon nitride powder is an amorphous silicon nitride powder obtained by thermally decomposing silicon diimide (Si(NH) 2 ).