Method of forming a polycrystalline silicon layer
View Patent ↗A method of forming a polycrystalline silicon layer. An amorphous silicon layer on a substrate is completely melted using a laser beam passed through a mask so as to form a polycrystalline silicon layer. The upper portion of the polycrystalline silicon layer is then re-melted and re-crystallized using a laser beam passed through a mask. The mask includes a high transmittance region for completely melting the amorphous silicon layer and a low transmittance region for re-melting the upper portion of the polycrystalline silicon layer.
1. A laser-based crystallization apparatus, comprising:
a laser source for emitting a laser beam;
a mask for receiving said laser beam, said mask including a first region having a first transmittance of said laser beam, a second region having a second transmittance of said laser beam and a third region having a third transmittance of said laser beam, wherein the second transmittance is higher than the third transmittance and lower than the first transmittance, the transmittance of each region is substantially uniform, the first region is substantially transparent, and the first region is spaced apart from the second region by the third region;
a projection lens for receiving said laser beam from said mask, said projection lens for focusing said laser beam onto a substrate.
2. A laser-based crystallization apparatus according to claim 1 , wherein said second region has a stripe shape.
3. A laser-based crystallization apparatus according to claim 1 , wherein said first region has a stripe shape.
4. A laser-based crystallization apparatus according to claim 1 , wherein said substrate moves relative to said laser beam.
5. A laser-based crystallization apparatus according to claim 1 , wherein said laser beam is an excimer laser beam.
6. A laser-based crystallization apparatus according to claim 1 , wherein the transparent substrate is made of quartz.
7. A laser-based crystallization apparatus according to claim 1 , wherein the first and second regions alternate with each other.
8. A laser-based crystallization apparatus according to claim 1 , wherein a moving pitch between the substrate and the laser beam is less than a width of the first region.
9. A laser-based crystallization apparatus according to claim 1 , wherein the laser beam is irradiated onto a portion of the substrate through the first region and then the laser beam is irradiated onto the portion of the substrate through the second region.