Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device which can enhance adhesiveness between a barrier conductive film and an organic insulating film, and prevent film-fall-off, and the manufacturing technique thereof are provided. After a silicon nitride film is formed on the main surface of semiconductor substrate, an organic insulating film is formed on the silicon nitride film. The organic insulating film is formed of a material having a dielectric constant lower than that of a silicon oxide film. Subsequently, wiring grooves are formed in the silicon nitride film and the organic insulating film by means of a photolithography technique and etching technique. An oxide film is formed by irradiating the organic insulating film with ultraviolet rays by use of excimer lamp. The ultraviolet-ray irradiation is performed in an atmosphere containing oxygen. A tantalum film serving as a barrier conductive film is formed on the organic insulating film with the mediation of the oxide film.
1. A semiconductor device, comprising:
(a) an organic insulating film,
(b) a wiring which is formed so as to be buried in the organic insulating film and which includes a copper film, and
(c) a barrier conductive film formed between a sidewall of the wiring and the organic insulating film;
wherein an oxide film is formed between the barrier conductive film and the organic insulating film, and
wherein the oxide film is formed by irradiating the surface of the organic insulating film with light having energy for cutting carbon-carbon bonds.
2. The semiconductor device described in claim 1 , wherein the oxide film is formed by oxidizing the surface of the organic insulating film.
3. The semiconductor device described in claim 1 ,
wherein the organic insulating film is comprised of a phenylene-based material.
4. The semiconductor device described in claim 3 ,
wherein the phenylene-based material is comprised of a phenylene-diamond, a benzimidazone polymer or a polyallylether.
5. The semiconductor device described in claim 1 ,
wherein barrier conductive film includes a tantalum film.
6. A semiconductor device, comprising:
(a) an organic insulating film;
(b) a wiring which is formed so as to be buried in the organic insulating film and which includes a copper film, and
(c) a barrier conductive film formed between a sidewall of the wiring and the organic insulating film;
wherein an oxide film is formed between the barrier conductive film and the organic insulating film, and
wherein the oxide film is formed by irradiating the surface of the organic insulating film with light having an emission wavelength of 170 nm.
7. The semiconductor device described in claim 6 ,
wherein the oxide film is formed by oxidizing the surface of the organic insulating film.
8. The semiconductor device described in claim 6 ,
wherein the organic insulating film is comprised of a phenylene-based material.
9. The semiconductor device described in claim 8 ,
wherein the phenylene-based material is comprised of phenylene-diamond, a benzimidazone polymer or a polyallylether.
10. The semiconductor device described in claim 6 ,
wherein barrier conductive film includes a tantalum film.