Method of forming a polycrystalline silicon layer
View Patent ↗A method of forming a polycrystalline silicon layer. An amorphous silicon layer on a substrate is completely melted using a laser beam passed through a mask so as to form a polycrystalline silicon layer. The upper portion of the polycrystalline silicon layer is then re-melted and re-crystallized using a laser beam passed through a mask. The mask includes a high transmittance region for completely melting the amorphous silicon layer and a low transmittance region for re-melting the upper portion of the polycrystalline silicon layer.
1. A method of forming a polycrystalline silicon layer, comprising:
forming an amorphous silicon layer on a substrate;
melting the amorphous silicon layer using a laser beam thereby forming the polycrystalline silicon layer using a mask; and
melting only an upper portion of the polycrystalline silicon layer using the laser beam with the mask thereby recrystallizing the upper portion of the polycrystalline silicon layer,
wherein said melting the amorphous silicon layer and said melting only the upper portion of the polycrystalline silicon layer are simultaneously performed.
2. The method of claim 1 , wherein the mask has a completely melting region and a partially melting region.
3. The method of claim 2 , wherein the completely melting region and the partially melting region have stripe shapes.
4. The method of claim 3 , wherein the completely melting region and the partially melting region are positioned in series.
5. The method of claim 1 , wherein the first and second steps are proceeded through one scanning process of moving the substrate having the amorphous silicon layer under the laser beam.