Method for fabricating liquid crystal display device using two masks
View Patent ↗A method for fabricating a liquid crystal display device includes: forming a pixel electrode on a substrate; forming a first conductive layer on the pixel electrode; forming a first photoresist pattern on the conductive layer; forming a source electrode forming portion, a channel forming portion and a pixel electrode forming portion using the first photoresist pattern as a mask; forming a semiconductor layer over an entire surface of the substrate; forming an insulating layer on the semiconductor layer; forming a second conductive layer on the insulating layer; forming a second photoresist pattern on the second conductive layer; forming an active layer using the second photoresist pattern; and forming a gate electrode on the active layer.
1. A liquid crystal display device comprising;
a substrate;
a pixel electrode and a source electrode extension portion formed on the substrate;
a source electrode formed on the source electrode extension portion;
an active layer formed on the substrate and overlapping and connecting with the pixel electrode and the source electrode extension portion;
a gate insulating layer formed on the active layer; and
a gate electrode formed over the gate insulating layer.
2. The liquid crystal display device of claim 1 , wherein the source electrode extension portion is made of the same material as the pixel electrode.
3. The liquid crystal display device of claim 2 , wherein a data line is formed on and overlapping the source electrode extension portion.
4. The liquid crystal display device of claim 1 , wherein a first conductive layer is positioned between the source electrode and the active layer, and a second conductive layer is positioned between the pixel electrode and the active layer.
5. The method of claim 1 , wherein the insulating layer is formed over the source electrode, and a gate line including the gate electrode is formed on the insulating layer.
6. The liquid crystal display device of claim 1 , wherein portions of the active layer connected to the source electrode extension portion and the pixel electrode are doped with high density impurity ions.