Top-emitting organic light emitting diode structures and fabrication method thereof
Top-emitting organic light emitting diode (OLED) structures and fabrication method thereof. A first electrode is formed on a substrate. A dielectric layer including at least one first opening is formed on the first electrode. An organic emission layer is formed on the dielectric layer and fills the first opening. A second electrode including at least one second opening is formed on the organic emission layer. The second opening corresponds to the first opening.
1. A top-emitting organic light emitting diode (OLED) structure, comprising:
a substrate;
a first electrode formed on the substrate;
a dielectric layer comprising at least one first opening formed on the first electrode;
an organic emission layer formed on the dielectric layer filling in the first opening; an electron-transporting layer overlying the organic emission layer; and
a second electrode comprising at least one second opening, wherein the second opening at least exposes a portion of the electron-transporting layer.
2. The OLED structure according to claim 1 , further comprising a protective layer covering the second electrode and the second opening.
3. The OLED structure according to claim 1 , wherein the substrate is a thin film transistor array substrate.
4. The OLED structure according to claim 1 , the first electrode is a reflective metal layer serving as an anode.
5. The OLED structure according to claim 4 , further comprising a hole-injecting layer and a hole-transporting layer interposed between the reflective metal layer and the dielectric layer.
6. The OLED structure according to claim 1 , wherein the dielectric layer comprises silicon oxide and/or silicon nitride.
7. The OLED structure according to claim 1 , wherein the second electrode is an opaque metal layer serving as a cathode.
8. The OLED structure according to claim 7 , wherein the electron-transporting layer is interposed between the opaque metal layer and the organic emission layer.
9. The OLED structure according to claim 1 , wherein an opening area of the second opening is less than that of the first opening.
10. A method of forming a top-emitting organic light emitting diode (OLED) structure, comprising:
forming a first electrode formed on a substrate;
forming a dielectric layer comprising at least one first opening on the first electrode;
forming an organic emission layer on the dielectric layer to fill the first opening;
forming an electron-transporting layer on the organic emission layer; and
forming a second electrode comprising at least one second opening on the electron-transporting layer, wherein the second opening at least exposes a portion of the electron-transporting layer on the organic emission layer.
11. The method according to claim 10 , further comprising forming a protective layer covering the second electrode and the second opening.
12. The method according to claim 10 , wherein the substrate is a thin film transistor array substrate.
13. The method according to claim 10 , the first electrode is a reflective metal layer serving as an anode.
14. The method according to claim 13 , further comprising forming a hole-injecting layer and a hole-transporting layer between the reflective metal layer and the dielectric layer.
15. The method according to claim 10 , wherein the dielectric layer comprises silicon oxide and/or silicon nitride.
16. The method according to claim 10 , wherein the second electrode is an opaque metal layer serving as a cathode.
17. The method according to claim 10 , wherein an opening area of the second opening is less than that of the first opening.