IP Library Granted Patent US 7,668,578
Granted Patent B2
US 7,668,578 · App. 11/002,860 · Granted Feb 23, 2010

MgB

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Quick Facts
Patent No.
US 7,668,578
App. No.
11/002,860
Granted
Feb 23, 2010
Kind
B2
Abstract

A solid structure includes a substrate and a layer located on a surface of the substrate. The layer includes crystalline or polycrystalline MgB 2 .

Claims (21)

1. A solid structure, comprising:

a substrate; and

a crystalline or polycrystalline layer of MgB 2 being located on a surface of the substrate; and

wherein the substrate is crystalline or polycrystalline and projections along the surface of corresponding lattice constants of the layer and the substrate match to within ten percent.

2. The structure of claim 1 , wherein the layer has a thickness of less than about 1 micron.

3. The structure of claim 1 , wherein the substrate is crystalline or polycrystalline and projections along the surface of corresponding lattice constants of the layer and the substrate match to within about one percent.

4. The structure of claim 1 , wherein the substrate comprises one of SiC, LaAlO 3 , and sapphire.

5. The structure of claim 1 , wherein the layer forms a ring structure broken by two junction regions.

6. The solid structure of claim 1 , wherein the layer is able to function as a superconductor.

7. A solid structure, comprising:

a substrate; and

a crystalline or polycrystalline layer of MgB 2 being located on a surface of the substrate; and

wherein the layer has a thickness of less than about 1 micron.

8. The structure of claim 7 , wherein the substrate is crystalline or polycrystalline.

9. The structure of claim 8 , wherein projections along the surface of corresponding lattice constants of the layer and the substrate match to within about ten percent.

10. The structure of claim 8 , wherein projections along the surface of corresponding lattice constants of the layer and the substrate match to within about one percent.

11. The structure of claim 7 , wherein the substrate comprises one of SiC, LaAlO 3 , and sapphire.

12. The structure of claim 7 , wherein the layer forms a ring structure broken by two junction regions.

13. The solid structure of claim 7 , wherein the layer is able to function as a superconductor.

14. The structure of claim 1 , wherein the substrate comprises SiO 2 .

15. The structure of claim 7 , wherein the substrate comprises SiO 2 .

Assignments (10)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2021
From: PROVENANCE ASSET GROUP LLC
To: RPX CORPORATION
Reel/Frame 059352/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 30, 2021
From: CORTLAND CAPITAL MARKETS SERVICES LLC
To: PROVENANCE ASSET GROUP HOLDINGS LLC; PROVENANCE ASSET GROUP LLC
Reel/Frame 058983/0104 →
RELEASE OF SECURITY INTEREST Recorded Nov 30, 2021
From: NOKIA US HOLDINGS INC.
To: PROVENANCE ASSET GROUP HOLDINGS LLC; PROVENANCE ASSET GROUP LLC
Reel/Frame 058363/0723 →
ASSIGNMENT AND ASSUMPTION AGREEMENT Recorded Feb 14, 2019
From: NOKIA USA INC.
To: NOKIA US HOLDINGS INC.
Reel/Frame 048370/0682 →
SECURITY INTEREST Recorded Sep 13, 2017
From: PROVENANCE ASSET GROUP HOLDINGS, LLC; PROVENANCE ASSET GROUP LLC
To: NOKIA USA INC.
Reel/Frame 043879/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2017
From: NOKIA TECHNOLOGIES OY; NOKIA SOLUTIONS AND NETWORKS BV; ALCATEL LUCENT SAS
To: PROVENANCE ASSET GROUP LLC
Reel/Frame 043877/0001 →
SECURITY INTEREST Recorded Sep 13, 2017
From: PROVENANCE ASSET GROUP HOLDINGS, LLC; PROVENANCE ASSET GROUP, LLC
To: CORTLAND CAPITAL MARKET SERVICES, LLC
Reel/Frame 043967/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2014
From: CREDIT SUISSE AG
To: ALCATEL-LUCENT USA INC.
Reel/Frame 033950/0001 →
SECURITY INTEREST Recorded Mar 7, 2013
From: ALCATEL-LUCENT USA INC.
To: CREDIT SUISSE AG
Reel/Frame 030510/0627 →
MERGER Recorded Dec 21, 2009
From: LUCENT TECHNOLOGIES INC.
To: ALCATEL-LUCENT USA INC.
Reel/Frame 023682/0794 →