Seal pattern for ultra-thin liquid crystal display device
View Patent ↗A seal pattern for a liquid crystal display device includes a substrate having an active area and a non-active area, a main seal pattern arranged in a boundary between the active area and the non-active area and having an injection hole, a V-shaped seal pattern arranged in the non-active area and spaced apart from the injection hole, wherein an open portion of the V-shape faces in a direction opposite the injection hole, and a sub-seal pattern arranged in the non-active area, having a same width as that of the main seal pattern, and having a plurality of exhaust holes arranged in positions corresponding to the V-shaped seal pattern and the injection hole.
1. A material removal process for forming a liquid crystal display device, comprising:
providing a substrate, the substrate including first and second regions;
providing a main seal pattern in a boundary between the first and second regions, the main seal pattern having an injection hole;
providing a V-shaped seal pattern in the second region and spaced apart from the injection hole, the V-shaped seal pattern having an open portion facing a direction opposite the injection hole;
providing a sub-seal pattern in the second region, the sub-seal pattern including an exhaust hole through which air is exhausted, the location of the exhaust hole corresponding to a location of the injection hole;
removing a portion of the substrate; and
separating the first region from the second region.
2. The material removal process according to claim 1 , wherein the removing comprises etching the substrate in an etchant.
3. The material removal process according to claim 2 , wherein the etchant comprises hydrofluoric acid.
4. The material removal process according to claim 2 , wherein the concentration of hydrofluoric acid is below about 50%.
5. The material removal process according to claim 2 , wherein the concentration of hydrofluoric acid is between about 16% and about 17%.
6. The material removal process according to claim 2 , wherein the etching is performed between about 30 seconds and about 120 seconds.
7. The material removal process according to claim 1 , wherein, after the removing, the substrate has a thickness of about 0.3 mm to about 0.6 mm.
8. The material removal process according to claim 1 , wherein the first region includes a display region and the second region includes a non-display region.