Mask for crystallizing and method of crystallizing amorphous silicon using the same
View Patent ↗A method of crystallizing amorphous silicon using a mask having a transmitting portion including a plurality of stripes, wherein end lines of at least two stripes are not collinear; and a blocking portion enclosing the plurality of stripes includes the steps of setting the mask over a substrate having an amorphous silicon layer, applying a first laser beam to a first area of the amorphous silicon layer through the mask, thereby forming a first crystallization region, moving the substrate in a first direction, thereby disposing the blocking portion of the mask over the first crystallization region, and applying a second laser beam to the first area of the amorphous silicon layer through the mask, thereby forming a second crystallization region.
1. A method of crystallizing amorphous silicon using a mask having a transmitting portion including first and second stripes parallel with each other, wherein end lines of the first and second stripes are not collinear and having a blocking portion enclosing the first and second stripes, the method comprising:
placing the mask over a substrate having an amorphous silicon layer;
applying a first laser beam to a first area of the amorphous silicon layer through the mask, thereby forming a first crystallization region;
moving the substrate in a first direction, thereby disposing the blocking portion of the mask over the first crystallization region and overlapping ends of the first and second stripes with ends of the first crystallization region; and
applying a second laser beam to the first area of the amorphous silicon layer through the mask, thereby forming a second crystallization region.
2. A method of crystallizing amorphous silicon using a mask having a transmitting portion including first and second stripes parallel with each other, wherein end lines of the first and second stripes are not collinear and having a blocking portion enclosing the first and second stripes, the method comprising:
placing the mask over a substrate having an amorphous silicon layer;
applying a first laser beam to a first area of the amorphous silicon layer through the mask, thereby forming a first crystallization region;
moving the substrate in a first direction, thereby disposing the blocking portion of the mask over the first crystallization region;
applying a second laser beam to the first area of the amorphous silicon layer through the mask, thereby forming a second crystallization region; and
repeatedly moving the substrate in a second direction by a transmitting portion length and applying a laser beam to the amorphous silicon layer after applying the first laser beam.
3. The method according to claim 2 , further comprising, repeatedly moving the substrate in a second direction by the transmitting portion length and applying a laser beam to the amorphous silicon layer after applying the second laser beam.
4. The method according to claim 1 , wherein a width of the transmitting portion is wider than a width of blocking portion.
5. The method according to claim 1 , wherein the first crystallization region overlaps the second crystallization region.
6. The method according to claim 1 , wherein the first and second stripes have the same length.
7. The method according to claim 1 , wherein the first and second laser beams have an intensity sufficient to completely melt the amorphous silicon layer.