Structure and method for III-nitride monolithic power IC
View Patent ↗III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures.
1. A monolithic power IC, comprising:
a low voltage section having low voltage electronics for realizing control functions;
a high voltage section having high voltage electronics for high voltage switching functions;
an isolation structure between a low voltage electronics and the high voltage electronics for isolating the low voltage electronics from the high voltage electronics;
the isolation structure further permitting connectivity between the low voltage section and the high voltage section, wherein the isolation structure is composed of wide band gap semiconductor material.
2. The IC according to claim 1 , wherein the wide band gap material includes a component selected from group consisting of column III-nitrides.
3. The IC according to claim 2 , wherein the isolation structure includes one or more of a material selected from the group consisting of GaN, AIN, InN, and alloys thereof.
4. The IC according to claim 1 , wherein the isolation structure includes a junction isolation structure.
5. The IC according to claim 4 , wherein the junction isolation structure exhibits a breakdown voltage greater than 450V.
6. The IC according to claim 4 , wherein the junction isolation structure includes a III-nitride semiconductor PN junction.
7. The IC according to claim 1 , wherein the isolation structure includes dielectric isolation.
8. The IC according to claim 1 , wherein the isolation structure is a planar structure.
9. The IC according to claim 1 , wherein the isolation structure includes an epitaxial layer.
10. The IC according to claim 9 , wherein the epitaxial layer includes a percentage of GaN.
11. The IC according to claim 9 , wherein the epitaxial layer includes a percentage of AlGaN.
12. The IC according to claim 9 , further comprising electronic device structures with epitaxial layers grown with the epitaxial dielectric layer.
13. The IC according to claim 1 , wherein the high voltage section has a relatively low resistance area product.
14. The IC according to claim 1 , wherein the isolation structure includes a dielectric isolation layer incorporating a percentage of a material selected from the group consisting of column III-nitrides.
15. The IC according to claim 14 , wherein the dielectric isolation layer exhibits the characteristics of a good thermal conductor.
16. The IC according to claim 1 , further comprising lateral and vertical device geometries.