IP Library Granted Patent US 7,079,429
Granted Patent B2
US 7,079,429 · App. 11/004,391 · Granted Jul 18, 2006

Semiconductor memory device

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Quick Facts
Patent No.
US 7,079,429
App. No.
11/004,391
Granted
Jul 18, 2006
Kind
B2
Abstract

There is provided a semiconductor memory device in which data, stored in a unit data storage section configured by one or more data storage elements, is erased to be formed into a specific erasure data pattern. The semiconductor memory device has a data protection mechanism in which a determination is made as to whether or not data stored in the unit data storage section has the erasure data pattern, and programming of the data into the unit data storage section is inhibited when the data is not in the erasure data pattern. This mechanism can protect already programmed data from being destroyed due to programming error at the time of programming the data.

Claims (13)

1. A semiconductor memory device comprising:

a unit data storage section configured by one or more data storage elements; and

a data protection mechanism for inhibiting programming of data into the unit data storage section, wherein

data stored in the unit data storage section is, after erased, formed into a specific erasure data pattern, and

the data protection mechanism inhibits programming of data into the unit data storage section when the data stored in the unit data storage section is not in the erasure data pattern.

2. The semiconductor memory device according to claim 1 , wherein

the data storage element is configured by a nonvolatile storage element.

3. A semiconductor memory device comprising:

a unit data storage section configured by one or more data storage elements;

an erasing mechanism for erasing data stored in the unit data storage section to form the data after erased into a specific erasure data pattern; and

a data protection mechanism for inhibiting programming of data into the unit data storage section when the data stored in the unit data storage section is not in the erasure data pattern.

4. The semiconductor memory device according to claim 3 , wherein

the data storage element is configured by a nonvolatile storage element.

Assignments (4)
MERGER Recorded Dec 10, 2015
From: TELEMANN FUND NINE, LIMITED LIABILITY COMPANY
To: TAMIRAS PER PTE. LTD., LLC
Reel/Frame 037261/0167 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 22, 2013
From: INTELLECTUALS HIGH-TECH KFT.
To: TELEMANN FUND NINE, LIMITED LIABILITY COMPANY
Reel/Frame 029670/0072 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2013
From: SHARP KABUSHIKI KAISHA
To: INTELLECTUALS HIGH-TECH KFT.
Reel/Frame 029653/0907 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 3, 2004
From: HIGASHINO, HIROFUMI
To: SHARP KABUSHIKI KAISHA
Reel/Frame 016062/0669 →