Solid-state imaging device and method for manufacturing the same
View Patent ↗A solid-state imaging device according to the present invention includes a semiconductor substrate; a photoelectric conversion portion formed on the semiconductor substrate; a gate insulating film formed on the semiconductor substrate and covering the photoelectric conversion portion; a vertical transfer portion for transferring a charge generated at the photoelectric conversion portion in a vertical direction; and a multilayer transfer gate electrode for transferring the charge of the vertical transfer portion. At least one layer of the multilayer transfer gate electrode is made of at least two impurity doped amorphous silicon films of different impurity concentration. Thus, the solid-state imaging device and a method of manufacturing the same that tend to develop no local potential barrier in the transfer channel, enhance the yield, improve the withstand voltage of the insulating film that is sandwiched between electrodes, and prevent the leakage of light and the step interruption of the metal conductors due to local thinning of the light-blocking film are provided.
1. A method for manufacturing a solid-state imaging device comprising a semiconductor substrate; a photoelectric conversion portion formed on the semiconductor substrate; a gate insulating film formed on the semiconductor substrate and covering the photoelectric conversion portion; a vertical transfer portion for transferring a charge generated at the photoelectric conversion portion in a vertical direction; and a multilayer transfer gate electrode for transferring the charge of the vertical transfer portion;
wherein at least one layer of the multilayer transfer gate electrode is made of at least two impurity doped amorphous silicon films of different impurity concentration; and
wherein the impurity doped amorphous silicon films are formed by:
a step of forming a first doped amorphous silicon film with a first impurity concentration;
a step of etching the first doped amorphous silicon film into the shape of the transfer gate electrode;
a step of forming a second doped amorphous silicon film with a second impurity concentration; and
a step of etching the second doped amorphous silicon film into the shape of the transfer gate electrode.
2. The method for manufacturing the solid-state imaging device according to claim 1 , wherein at least one layer of the multilayer transfer gate electrode is further formed by:
a step of diffusing n-type impurities that are higher in concentration than that of the first and second doped amorphous silicon film into the surface of the transfer gate electrode; and
a step of forming a silicon oxide film by thermally oxidizing the transfer gate electrode.
3. The method for manufacturing the solid-state imaging device according to claim 1 , wherein at least one layer of the multilayer transfer gate electrode is further formed by:
a step of thermally oxidizing the transfer gate electrode using water that is formed by hydrogen and oxygen at low pressure.
4. The method for manufacturing the solid-state imaging device according to claim 1 , wherein an average impurity concentration of the impurity doped amorphous silicon films is at least 1.0×10 20 cm −3 and at most 3.0×10 20 cm −3 .
5. The method for manufacturing the solid-state imaging device according to claim 1 , wherein the gate insulating film is formed in a 3-layer structure of a silicon oxide film, a silicon nitride film, and a silicon oxide film from the inward side.
6. The method for manufacturing the solid-state imaging device according to claim 1 , wherein a metal light-blocking film is further formed on the outer silicon oxide film that makes up the gate insulating film.
7. The method for manufacturing the solid-state imaging device according to claim 1 , wherein microcrystal regions in the n-type impurity doped amorphous silicon layer do not directly contact the gate insulating film.
8. The method for manufacturing the solid-state imaging device according to claim 1 , wherein a difference in the impurity concentration between the impurity doped amorphous silicon films is at least 1.0×10 20 cm −3 and at most 6.0×10 20 cm −3 .