IP Library Granted Patent US 7,208,262
Granted Patent B2
US 7,208,262 · App. 11/006,876 · Granted Apr 24, 2007

Yield and line width performance for liquid polymers and other materials

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Quick Facts
Patent No.
US 7,208,262
App. No.
11/006,876
Granted
Apr 24, 2007
Kind
B2
Abstract

Systems and methods are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. An apparatus for minimizing fluid impingement force on a polymer layer to be developed on a substrate includes: a nozzle including: a developer manifold adapted to supply a developer fluid; a plurality of developer fluid conduits coupled to the developer manifold; a rinse manifold adapted to supply a rinse fluid; and a plurality of rinse fluid conduits coupled to the developer manifold. The developer manifold and the rinse manifold can be staggered so as to reduce an external width of the nozzle compared to a nominal external width of the nozzle achievable without either intersecting the fluid manifold and the another manifold or staggering the fluid manifold and the another manifold. The systems and methods provide advantages including improve yield via reduced process-induced defect and partial counts, and improved critical dimension (CD) control capability.

Claims (8)

1. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH, said method comprising:

developing at least a portion of a polymer layer on a substrate with a charge of developer fluid; then

contacting said substrate with a charge of buffer, thereby mixing at least a portion of said developer fluid with at least a portion of said charge of buffer, so as to controllably minimize a subsequent sudden change in pH; and then

rinsing said polymer with a charge of another fluid.

2. The method of claim 1 , wherein developing at least said portion of said polymer on said substrate includes developing at least a portion of an exposed photoresist polymer on said substrate.

3. The method of claim 1 , wherein developing at least said portion of said polymer of said substrate includes developing said at least a portion of said polymer on a semiconductor wafer substrate.

4. The method of claim 1 , wherein rinsing said polymer with said charge of another fluid includes rinsing said polymer with deionized water.

5. The method of claim 1 , further comprising providing a laminar airflow field in a developer fluid module in which said substrate is located.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 20, 2009
From: GURER, EMIR; LEE, ED C.; KRISHNA, MURTHY; REYNOLDS, REESE; SALOIS, JOHN; CHERRY, ROYAL
To: SILICON VALLEY GROUP, INC.
Reel/Frame 022708/0755 →
MERGER Recorded May 20, 2009
From: SVG LITHOGRAPHY SYSTEMS, INC.
To: ASML US, INC.
Reel/Frame 022708/0766 →
MERGER Recorded May 20, 2009
From: ASM LITHOGRAPHY, INC.; ASML US, LLC
To: ASML US, INC.
Reel/Frame 022708/0774 →
CHANGE OF NAME Recorded May 20, 2009
From: ASML US INC.
To: ASML US, LLC
Reel/Frame 022708/0779 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 20, 2009
From: ASML US INC.
To: ASML HOLDING N.V.
Reel/Frame 022708/0787 →
CHANGE OF NAME Recorded May 20, 2009
From: SILICON VALLEY GROUP, INC.
To: ASML US, INC.
Reel/Frame 022708/0821 →