IP Library Granted Patent US 7,112,776
Granted Patent B2
US 7,112,776 · App. 11/008,211 · Granted Sep 26, 2006

Solid state detector and method of manufacturing same

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Quick Facts
Patent No.
US 7,112,776
App. No.
11/008,211
Granted
Sep 26, 2006
Kind
B2
Abstract

Deterioration of a photoconductive layer is prevented, by suppressing the application of heat during connection of a second electrode with an external terminal. A solid state detector is constituted by: an external terminal, which is electrically connected to a voltage source for applying a recording voltage to the second electrode when recording image information at a charge accumulating portion; and a connecting member formed by a conductive elastic material, of which a first end is fixed to the external terminal, and a second end contacts the second electrode by elastic force.

Claims (7)

1. A solid state detector provided on a substrate, comprising:

first electrodes, stacked on the substrate;

a photoconductive layer that generates charges corresponding to amounts of recording electromagnetic waves bearing image information, stacked on the first electrodes;

a second electrode, stacked on the photoconductive layer;

a charge accumulating portion that records the image information by accumulating the charges generated by the photoconductive layer;

an external terminal, which is electrically connected to a voltage source for applying recording voltage to the second electrode during recording of the image information in the charge accumulating portion; and

a connecting member formed of wire, having a first end connected to the external terminal, and a second end connected to the second electrode by ultrasonic welding.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2007
From: FUJIFILM HOLDINGS CORPORATION (FORMERLY FUJI PHOTO FILM CO., LTD.)
To: FUJIFILM CORPORATION
Reel/Frame 018904/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2005
From: IWAKIRI, NAOTO
To: FUJI PHOTO FILM CO., LTD.
Reel/Frame 016396/0973 →