Method of separating layers of material

1. A method of separating at least one layer of material from a substrate, said method comprising:

providing first and second substrates and at least one layer of material between said substrates, said at least one layer of material being segregated into a plurality of sections separated by streets;

forming a beam spot using a laser, wherein said beam spot is shaped to cover a region including an integer number of said sections and any of said streets between said sections in said region, said integer number of said sections being greater than one; and

irradiating an interface between said first substrate and said sections using said beam spot, wherein said inadiating is performed for a plurality of regions until said first substrate is separated from all of said sections.

2. The method of claim 1 wherein said irradiating is performed for each said integer number of said sections such that stitching of said beam spot occurs only within said streets between said sections.

3. The method of claim 1 further comprising:

moving said substrates and said layer on a stage; and

comparing a position of said stage with a predetermined value, wherein said laser is triggered based on said position to form said beam spot and irradiate said interface between said first substrate and each said integer number of said sections.

4. The method of claim 3 wherein said stage moves substantially continuously.

5. The method of claim 1 wherein said sections are generally rectangular and wherein said beam spot is generally rectangular.

6. The method of claim 1 further comprising etching said at least one layer of material to form said plurality of sections.

7. The method of claim 6 wherein etching said at least one layer includes using a laser beam to selectively remove portions of said at least one layer of material in said streets.

8. The method of claim 7 wherein etching said at least one layer includes applying a patterned laser projection using an excimer laser.

9. The method of claim 7 wherein etching said at least one layer includes dicing using an UV diode pumped solid state laser.

10. The method of claim 1 wherein said substrate is a semiconductor wafer, and wherein said sections of said at least one layer correspond to dies.

11. The method of claim 1 wherein said interface between said first substrate and said sections is irradiated using a homogeneous beam spot formed using a beam homogenizer.

12. The method of claim 1 wherein inadiating said interface includes exposing said interface to laser light at a range of angles with respect to said interface.

13. The method of claim 1 wherein said laser is an excimer laser, and wherein inadiating said interface includes exposing said interface to a single pulse of said excimer laser for each said integer number of said sections.

14. The method of claim 1 wherein irradiating is performed using a laser energy density sufficient to induce an explosive shock wave at said interface, wherein said explosive shock wave separates said first substrate from said sections.

15. The method of claim 1 wherein inadiating is performed using a laser energy density in a range of about 0.60 J/cm 2 to 1.6 J/cm 2 .

16. The method of claim 1 wherein said sections and said streets are covered by another layer of material.

17. A method of separating at least one layer of material from a substrate, said method comprising:

providing a first substrate having at least one layer of material formed thereon;

etching said at least one layer of material to segregate said at least one layer into a plurality of sections separated by streets on said first substrate, said sections conesponding to dies;

attaching a second substrate to said sections;

forming a homogenous beam spot using a laser, wherein said homogeneous beam spot is shaped to cover an integer number of said sections including any streets between said integer number of sections, said integer number of said sections being greater than one;

irradiating an interface between said first substrate and said sections using said homogeneous beam spot, wherein said irradiating is performed for each said integer number of said sections; and

separating said first substrate from all of said sections.

18. The method of claim 17 further comprising separating said sections to form said dies after said first substrate is separated.

19. The method of claim 18 wherein separating said sections includes scribing said second substrate on said streets between said sections.

20. The method of claim 17 wherein said first substrate includes a sapphire wafer.

21. The method of claim 17 wherein said at least one layer includes GaN.

22. The method of claim 17 wherein said second substrate includes Molybdenum or its alloys.

23. The method of claim 17 wherein providing said first substrate having said at least one layer of material formed thereon includes growing multiple monolithic GaN layers on a sapphire substrate.

24. The method of claim 17 further comprising applying a protective coating to said at least one layer and removing said protective coating after etching of said at least one layer and before attaching said second substrate.

25. The method of claim 17 wherein said homogeneous beam spot is formed by passing a raw beam generated by said laser through a homogenizer and an aperture.

26. The method of claim 25 further comprising:

moving said substrates on a stage; and

comparing a position of said stage with a predetermined value, wherein said laser is triggered based on said position to form said beam spot and irradiate an interface between said first substrate and each said integer number of said sections.

27. The method of claim 17 wherein said laser is an excimer laser, and wherein irradiating said interface includes exposing said interface to a single pulse of said excimer laser for each said integer number of said sections.

28. The method of claim 17 wherein irradiating is performed using a laser energy density sufficient to induce an explosive shock wave at said interface, wherein said explosive shock wave separates said first substrate from said sections.

29. The method of claim 28 wherein said energy density is in a range of about 0.60 J/cm 2 to 1.6 J/cm 2 .

30. The method of claim 17 further comprising:

forming a metal substrate over said sections and said streets prior to attaching said second substrate;

cutting at least said metal substrate at locations between said sections; and

removing at least a portion of said metal substrate after separating said first substrate from said sections.

31. A method of separating at least one layer of material from a substrate, said method comprising:

providing a first substrate having at least one layer of GaN formed thereon, said at least one layer of GaN being segregated into a plurality of GaN dies separated by streets;

forming at least one film on said GaN layer, said at least one film including a reflective film;

attaching a second substrate including Molybdenum to said at least one film;

forming a beam spot using a laser, wherein said beam spot is shaped to cover an integer number of said sections including any streets between said integer number of sections, said integer number of sections being greater than one; and

irradiating an interface between said first substrate and said GaN layer to separate said first substrate from said layer of GaN.

32. The method of claim 31 wherein said reflective film is an aluminum film.

33. The method of claim 32 wherein said at least one layer further includes a metallic film on said aluminum film, wherein second substrate including said Molybdenum attaches to said metallic film.

34. The method of claim 31 further comprising etching said at least one layer of GaN and said at least one film to form a plurality of dies separated by streets on said first substrate, before attaching said second substrate.

35. The method of claim 31 wherein irradiating includes exposing said interface to laser light at a range of angles with respect to said interface.