Pattern formation method
View Patent ↗In a pattern formation method, pattern exposure is performed by selectively irradiating, with exposing light, a resist film formed on a substrate and made of a resist including a carboxylic acid derivative. A first resist pattern is formed by developing the resist film after the pattern exposure, and subsequently, the first resist pattern is exposed to a solution including a reducing agent for reducing the carboxylic acid derivate. Thereafter, a water-soluble film including a crosslinking agent for causing crosslinking with a material of the first resist pattern is formed on the first resist pattern having been exposed to the solution. Subsequently, a crosslinking reaction is caused by annealing the water-soluble film between a portion of the water-soluble film and a portion of the first resist pattern in contact with each other on the sidewall of the first resist pattern, and then, a portion of the water-soluble film not reacted with the first resist pattern is removed. Thus, a second resist pattern made of the first resist pattern and a portion of the water-soluble film remaining on the sidewall of the first resist pattern is formed.
1. A pattern formation method comprising the steps of:
forming a resist film on a substrate, said resist including a carboxylic acid derivative;
performing pattern exposure by selectively irradiating with exposing light;
forming a first resist pattern by developing said resist film after the pattern exposure;
forming, on said first resist pattern, a water-soluble film including a reducing agent for reducing said carboxylic acid derivative and a crosslinking agent which reacts with said first resist pattern;
annealing said water-soluble film;
removing a first portion of said water-soluble film; and
forming a second resist pattern having said first resist pattern and a second portion of said water-soluble film,
wherein said first portion of said water-soluble film is a portion which does not react with said first pattern and said second portion of said water-soluble film is a portion which reacts with said first resist pattern.
2. The pattern formation method of claim 1 , further comprising, between the step of forming a first resist pattern and the step of forming a water-soluble film, a step of exposing said first resist pattern to a solution including a reducing agent for reducing said carboxylic acid derivative.
3. The pattern formation method of claim 1 ,
wherein said carboxylic acid derivative is a carboxylic group or a carboxylic ester group.
4. The pattern formation method of claim 1 ,
wherein said reducing agent is hydrogen iodide (HI) or hydrogen disulfide (H 2 S).
5. The pattern formation method of claim 1 ,
wherein said reducing agent is an oxide of an element having a valence lower than a standard valence.
6. The pattern formation method of claim 5 ,
wherein said oxide is carbon monoxide (CO) or sulfur dioxide (SO 2 ).
7. The pattern formation method of claim 1 ,
wherein said water-soluble film includes poly(vinyl alcohol), poly(vinylpyrrolidone), poly(acrylic acid), polystyrene sulfonic acid or pullulan.
8. The pattern formation method of claim 1 ,
wherein said exposing light is ArF excimer laser, KrF excimer laser, F 2 laser, Kr 2 laser, ArKr laser or Ar 2 laser or has a wavelength of 1 nm through 30 nm.
9. A pattern formation method comprising the steps of:
forming on a substrate a resist film made of a chemically amplified resist including a carboxylic acid derivative and a photoacid generator;
performing pattern exposure by selectively irradiating said resist film with exposure light;
forming a first resist pattern by developing said resist film after the pattern exposure;
forming on said first resist pattern a water-soluble film including a reducing agent and a crosslinking agent;
annealing said water-soluble film;
removing a first portion of said water-soluble film;
forming a second resist pattern having said first resist pattern and a second portion of said water-soluble film;
wherein the step of forming said water-soluble film is a step of applying a water-soluble material including said reducing agent and said crosslinking agent onto said substrate; and
said first portion of said water-soluble film is a portion which does not react with said first resist pattern, and said second portion of said water-soluble film is a portion which reacts with said first resist pattern.